講演情報
[9a-E206-5]Forming defect arrays with moiré ferroelectricity in hexagonal boron nitride
〇Jacques Hawecker1, Michael K.L. Man1, Prajakta Kokate1, Marisa Hocking2, William Millsaps2, Filchito Bagsican1, Nanami Tomoda1, Harley Suchiang1, Xing Zhu1, Amrita Mitra1, Kenji Watanabe3, Takashi Taniguchi4, Julien Madeo1, Andrew J. Mannix2, Keshav M. Dani1 (1.Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University; Onna-son, Okinawa, 904-0495 Japan., 2.Department of Materials Science and Engineering; Stanford University, Stanford, CA 94305, USA., 3.Research Center for Electronic and Optical Materials, National Institute for Materials Science; Tsukuba, Japan., 4.Research Center for Materials Nanoarchitectonics, National Institute for Materials Science; Tsukuba, Japan.)
キーワード：
hBN、Photoemission、Defects
Defects arrays with nanoscale pitches are crucial for scalable quantum technologies, but current methods lack sufficient precision. Instead, we explore spatial defect distribution in small angles twisted hBN, which exhibits moiré ferroelectricity. Photoemission electron microscopy (PEEM) reveals the spatial energetic landscape of hBN, surprisingly, we find that defects are preferentially localized at ferroelectric domain wall nodes for small domains, forming tunable nanoscale periodic arrays. For larger domains, defects align along the domain walls instead. Defect photoluminescence characterization shows spectral signatures consistent with known C-based single quantum emitters. This discovery provides a new pathway to spatially structure defects in van der Waals materials for quantum device development.