講演情報
[9a-PB4-3]Photoresponse Enhancement in a Solution-Gated Organic Phototransistor Using a Plasmonic Organic Solar-Cell Gate
〇(D)Tianshuo WANG1, Layheng Chea1, Reaksmey Ek1, Masahiro Minagawa2, Sachiko Jonai1, Yasuo Ohdaira1, Akira Baba1, Kazunari Shinbo1 (1.Niigata University, 2.National Institute of Technology, Nagaoka College)
キーワード：
solution-gated organic phototransistor、plasmonic organic solar cell、propagating surface plasmon resonance
We demonstrate a solution-gated organic phototransistor (SGOPT) using a plasmonic organic solar-cell (OSC) gate. The OSC, ITO/PEDOT:PSS/P3HT:PCBM/Al with a DVD-R grating imprinted in the P3HT:PCBM layer, generates an open-circuit voltage under illumination. This photovoltage is transferred through a PBS electrolyte and GO interface to modulate the P3HT FET channel. Five measurement states were compared to distinguish the direct FET photoresponse from OSC-induced optical gating. The connected device under simultaneous OSC/FET illumination showed the largest drain current, reaching 4.405 µA under white light at 2 mW/cm2. Under monochromatic illumination at 0.2 mW/cm2, the current was higher at 620 nm than at 500 nm, and P-polarized light produced a larger response than S-polarized light. These results indicate cooperative photogating enhanced by the grating-coupled propagating surface plasmon resonance near 670 nm.