講演情報
[9p-E219-4]Parametric Analysis of Width Variation in a Buried Si3N4 Rectangular Waveguide
〇(DC)KM PRIYANKA1, RITU RAJ SINGH1 (1.Netaji Subhas University of Technology)
キーワード：
Silicon nitride integrated circuits、Silicon nitride buried rectangular waveguide、Finite element method
Silicon nitride (Si3N4) has emerged as a promising platform for photonic integrated circuits due to its low optical loss, wide transparency window, and compatibility with CMOS fabrication processes. In this work, a buried rectangular Si3N4 waveguide is investigated through parametric optimization of the core width to achieve high optical confinement and low mode effective area (MEA). The waveguide consists of a Si3N4 core embedded within a SiO2 cladding and substrate, with a fixed core height of 220 nm. Numerical simulations are performed at a wavelength of 1550 nm using the Finite Element Method (FEM) in COMSOL Multiphysics. The influence of waveguide width on the confinement factor (CF) and MEA is analyzed by varying the core width from 10 nm to 5000 nm. The results demonstrate that increasing the waveguide width enhances optical confinement while reducing the effective mode area. An optimum width of 3000 nm is obtained, yielding a maximum CF of 40.24% and a minimum MEA of 3.098 µm2.