講演情報
[9p-F212-12]Fabrication-Oriented Design of Bullseye Cavities on SiO2-Si Substrates for Photon-Spin Quantum Interfaces
〇Youheng Li1, Guangtai Lu1, Sangmin Ji3, Satoshi Iwamoto1,2 (1.RCAST Univ. Tokyo, 2.IIS Univ. Tokyo, 3.Hiroshima Univ.)
キーワード：
Quantum interface
Semiconductor gate-defined quantum dots (GQDs) are promising platforms for photon-spin quantum interfaces but suffer from low photon-electron conversion efficiency. To address this challenge, we investigate a hybrid quantum interface device integrating a GQD with a bullseye cavity on a solid SiO2-Si substrate. Transitioning from previously studied air-suspended structures to this solid-substrate design significantly improves mechanical robustness, process tolerance, and electrode stability during fabrication. Utilizing finite-difference time-domain (FDTD) simulations, we optimize the substrate phase-matching to effectively suppress downward optical leakage. Our results demonstrate that this composite architecture achieves a peak GQD photon absorption efficiency of approximately 1.3%, successfully preserving the high optical performance of standalone cavities while overcoming critical microfabrication bottlenecks.