講演情報
[C-12-17]A 56-Gb/s 60-GHz CMOS Broadband Linear Bi-Directional Amplifier Supporting Large-Scale B5G/6G Phased-Array Transceivers
◎△Yilun Chen1, Minghao Fan1, Yuxuan Liu1, Minzhe Tang1, Yudai Yamazaki1, Dongfan Xu1, Ziyuan Ren1, Yuncheng Zhang1, Hiroyuki Sakai1, Kazuaki Kunihiro1, Kenichi Okada1 (1. Institute of Science Tokyo)
キーワード：
Millimeter-wave、CMOS、Bi-directional amplifier、Broadband、Transceiver、B5G/6G
This article presents a broadband linear differential bi-directional amplifier targeting 60-GHz large scale phased-array transceiver applications. To achieve compact integration, the transmitting (Tx) and receiving (Rx) paths share a common matching network (M.N.), while the gate–drain capacitance of the off-mode transistor functions as a neutralization capacitor to enhance gain and stability in both Tx and Rx modes. Furthermore, peaking inductors are introduced at each transistor gate to align the required source and load impedance of the Tx and Rx paths, thereby simplifying the M.N. design and improves linearity. Implemented in 65 nm CMOS process, the proposed bi-directional amplifier delivers a saturated output power of 10.5 dBm and achieves an output 1 dB compression point (OP1dB) of 8.3 dBm at 64-GHz in Tx mode, consuming 103 mW under a 1-V supply. In Rx mode, an input 1 dB compression point (IP1dB) of -10.1 dBm and a minimum noise figure (NF) of 5.1 dB is achieved, with 78mW power consumption. Under 16-QAM OFDM modulation with a 14-GHz bandwidth, a maximum data rate of 56 Gb/s is demonstrated, verifying its effectiveness in compact and high-speed 60-GHz phased-array front ends.