1972 Conference on Solid State Devices

1972 Conference on Solid State Devices

1972年8月30日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1972 Conference on Solid State Devices

1972 Conference on Solid State Devices

1972年8月30日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[2-4]Effects of Deep Level Centers on Microwave Frequency Characteristics of GaAs Schottky Barrier Gate FET

S. ASAI、Y. ISHIOKA、H. KURONO、S. TAKAHASHI、H. KODERA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1972.2-4
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