[I-T]Narrow-Gap Semiconductor Lasers and Detectors
I. Melngailis(1.Lincoln Lab., Massachusetts Institute of Technology)
1972 Conference on Solid State Devices
1972年8月30日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1972 Conference on Solid State Devices
1972年8月30日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(45)
[S-1]Surface Wave Devices
S. Furukawa T. Inamura(1.Tokyo Institute of Technology、2.Nippon Telegraph and Telephone Public Corporation)
[1-1]CONTROLLABLE NONLINEAR INTERACTIONS BETWEEN ELASTIC SURFACE WAVES AND CARRIERS IN Si-LiNbO3 MIS STRUCTURE
S. Takada、K. Hoh、H. Hayakawa、N. Mikoshiba(1.Electrotechnical Laboratory)
[1-2]Surface-Wave Convolver Using Nonlinear Electron Interactions in Coupled Semiconductor-Piezoelectric Systems
Masamichi Yamanishi、Takao Kawamura(1.Department of Electrical Engineering, College of Engineering, University of Osaka Prefecture)
[1-3]Acoustic surface wave image scanner
K. Asakawa、I. Uchida(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[S-2]Microwave Devices
R. Nii、T. Sugano、I. Kuru、K. Sekido(1.Nippon Telegraph and Telephone Public Corporation、2.University of Tokyo、3.Tokyo Shibaura Electric Co., Ltd.、4.Nippon Electric Co., Ltd.)
[2-1]Ultrasonic Amplification Influenced by High-Mobility Electrons in Piezoelectric Se-Te Alloy Crystals at Room Temperature
Tadashi SHIOSAKI、Shigehiro MIYATAKE、Tuneo MITUYU、Masumi OBATA、Akira KAWABATA(1.Department of Electronics, Kyoto University)
[2-2]Millimeter-Wave GaAs Schottky-Barrier IMPATT Diode
Kiyoshi Nawata、Mutsuo Ikeda、Yasuhiro Ishii(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corpration)
[2-3]30 GHz GaAs Schottky Barrier IMPATT Diodes
Masatoshi MIGITAKA、Michiharu NAKAMURA、Katsutoshi SAITO、Yoichi KANEKO(1.Central Research Laboratory, Hitachi Ltd.)
[2-4]Effects of Deep Level Centers on Microwave Frequency Characteristics of GaAs Schottky Barrier Gate FET
S. ASAI、Y. ISHIOKA、H. KURONO、S. TAKAHASHI、H. KODERA(1.Central Research Laboratory, Hitachi Ltd.)
[2-5]Self Aligned GaAs Schottky Barrier Gate FET using Preferential Etching
Yasuo Tarui、Yoshio Komiya、Takao Yamaguchi(1.Electrotechnical Laboratory)
[S-3]Ion Implantation & Device Technology (I)
M. Yasufuku H. Kodera(1.Fujitsu Co., Ltd.、2.Hitachi Ltd.)
[3-1]NEW SEMICONDUCTOR BUBBLE DOMAIN DETECTOR EMPLOYING THE HALL EFFECT ASSOCIATED WITH AN INVERTED MAGNETIC FIELD
Shoei Kataoka、Hideo Yamada、Yoshinobu Sugiyama(1.Electrotechnical Laboratory)
[3-2]A New Spectroscopic Method of Measuring Transient Temperature Distribution in High Power Thyristors
Junji Sakurai(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[3-3]INPROVEMENT OF THE SHALLOW BASE TRANSISTOR TECHNOLOGY BY USE OF A DOPED POLY-SILICON DIFFUSION SOURCE
M. Takagi、K. Nakayama、C. Terada、H. Kamioka(1.IC Engineering Department, Fujitsu Limited)
[S-4]Ion Implantation & Device Technology (II)
S. Namba、T. Tokuyama、M. Tsurushima、H. Ohmura(1.Osaka University、2.Hitachi Ltd.、3.Electrotechnical Laboratory、4.Tokyo Shibaura Electric Co., Ltd.)
[4-1]Low Energy Implantation of Boron into Silicon
N. Yoshihiro、T. Tokuyama(1.Central Reseach Laboratory, Hitachi Ltd.)
[4-2]Observation of Lattice Defects in Ion-Implanted Si Wafer by A Double Crystals Spectrometer Method
Seigo KISHNO、Atsuko NODA(1.Central Research Laboratory, Hitachi, Ltd.)
[4-3]Study on Three-Dimensional Distribution of Implanted Ions by He+ Backscattering Technique
Hiroshi ISHIWARA、Seijiro FURUKAWA、Hideki MATSUMURA、Nobuyoshi NATSUAKI(1.Department of Physical Electronics, Faculty of Engineering Tokyo Institute of Technology)
[4-4]Ion Implantation of Te and Sb in GaAs
Kenji Gamo、Mikio Takai、Kohzoh Masuda、Susumu Namba(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
[4-5]Formation of Optical Waveguide by Ion-Implantation into Fused Quartz
H. Aritome、T. Ikegami、T. Nishimura、K. Masuda、S. Namba(1.Faculty of Engineering Science, Osaka University)
[S-5]MOS & Memory Devices
M. Nagata、Y. Tarui、T. Aoki、S. Kubo(1.Hitachi Ltd.、2.Electrotechnical Laboratory、3.Sony Corporation)
[5-1]Non Volatile Optical Pattern Memory using MAOS Structure
Yasuo Tarui、Yoshio Komiya、Tsunenori Sakamoto(1.Electrotechnical Laboratory)
[5-2]A New Non-Volatile Read Write Random Access Memory Operation by Means of Avalanche-Tunnel Injection in MNOS Transistor
Y. Uchida、Y. Nishi、I. Nojima、K. Tanaka、K. Tamaru(1.Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[5-3]Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory
H. Iizuka、T. Sato、F. Masuoka、K. Ohuchi、H. Hara、H. Tango、M. Ishikawa、Y. Takeishi(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[5-4]Device Design of E/D Gate MOS-FET
H. Masuda、T. Masuhara、M. Nagata、N. Hashimoto(1.Central Research Laboratory, HitachiLtd.)
[5-5]A 1024 bit N-Channel MOS high speed RAM
J. Mogi、K. Miyasaka、S. Enomoto(1.FUJITSU LIMITED)
[S-6]MOS & Charge Transfer Devices
K. Takeishi、N. Kawamura、Y. Itoh、Y. Komiya(1.Tokyo Shibaura Electric Co., Ltd.、2.Nippon Electric Co., Ltd.、3.Hitachi Ltd.、4.Electrotechnical Laboratory)
[6-1]Properties of MOS Structures Prepared on Substrates having Ion Implanted Impurity Distribution Profile
T. Warabisako、I. Yoshida、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[6-2]New Modes of Operation in Plasma-Coupled Devices
K. Kawarada、Y. Yamamoto、K. Yano、T. Suzuki(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[6-3]Properties of a Schottky-Barrier Transistor and the Carrier-Coupling Devices
Ken-ichi CHINO、Toshimasa SUZUKI、Yoshihiko MIZUSHIMA(1.The Electrical Communication Laboratories, NTT)
[6-4]Bias Charge Optimization of High Speed CCD Operation
Yoshiaki Kamigaki、Hideo Sunami、Yokichi Itoh(1.Central Research Laboratory, Hitachi, Ltd.)
[6-5]AN IMPROVEMENT ON STRUCTURE OF CHARGE-COUPLED DEVICES
Tadayoshi MIFUNE、Shigeyuki OCHI、Yasuo KANO(1.SONY Corporation Research Center)
[S-7]Optoelectronic Devices (I)
S. Tanaka、I. Akasaki、A. Ishida、T. Igo(1.University of Tokyo、2.Matsushita Electric Industrial Co., Ltd.、3.Nippon Telegraph and Telephone Public Corporation)
[7-1]Light Valve Array Utilizing Ferroelectric SBN Single Crystal
Takahito YAZAKI、Keiichi KANATANI、Sud〓o SAKAMOTO(1.Sanyo Electric Co., Ltd., Research Center)
[7-2]A New Voltage-Tunable Light Deflector by Use of Off-Axis Acoustic Domain in CdS Crystals
Seijiro FURUKAWA、George MOTOSUGI(1.Department of Physical Electronics, Faculty of Engineering Tokyo Institute of Technology)
[7-3]Efficient "Photon Drag" Detector Using p-Type Tellurium
Somsak PANYAKEOW、Junji SHIRAFUJI、Yoshio INUISHI(1.Faculty of Engineering, Osaka University)
[7-4]Highly Sensitive Amorphous Optical Memory
M. Terao、H. Yamamoto、E. Maruyama(1.Central Research Laboratory, Hitachi Ltd.)
[7-5]Field Enhanced Processes in Photodoping Effects in Amorphous As2S3
Akihisa MATSUDA、Makoto KIKUCHI(1.Electrotechnical Laboratory)
[S-8]Optoelectronic Devices (II)
I. Hayashi、K. Maeda、A. Kasami、Y. Nannichi(1.Nippon Electric Co., Ltd.、2.Tokyo Shibaura Electric Co., Ltd.)
[8-1]The Optical Characteristics of Mesa-stripe-geometry Double-heterostructure Injection Lasers
T. Tsukada、N. Chinone、R. Ito、H. Nakashima、O. Nakada(1.Central Research Laboratory, Hitachi, Ltd.)
[8-2]GaAs Light Coupled Device
Z. Tani、K. Murata、T. Sakurai、T. Inoguchi(1.Central Research Lab., SHARP Corporation)
[8-3]Green-Light-Emitting Diodes of GaP Doped with Oxygen and Indium
Akira TANAKA、Hiroshi KOBAYASHI、Hiroyuki ITOH、Katsuo HARA、Tokuzo SUKEGAWA(1.Research Institute of Electronics, Shizuoka University)
[8-4]CdS ELECTROLUMINESCENT DIODES PRODUCED BY NITROGEN ION IMPLANTATION
Y. Shiraki、T. Shimada、T. Ikezu、K. F. Komatsubara(1.Central Research Laboratory, Hitachi Ltd.)
[8-5]Optical and Electrical Properties of Liquid Crystal Mixtures
Susumu Sato、Masanobu Wada(1.Department of Electronic Engineering, Tohoku University)
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