1973 International Conference on Solid State Devices

1973 International Conference on Solid State Devices

1973年8月29日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1973 International Conference on Solid State Devices

1973 International Conference on Solid State Devices

1973年8月29日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[2-3]PROTON-ENHANCED DIFFUSION OF As IN Si FROM A DOPED POLYCRYSTALLINE SOURCE (DOPOS)

J. F. Gibbons、J. R. MacDonald、R. E. Tremain(1.Department of Electrical Engineering, Stanford University)
https://doi.org/10.7567/SSDM.1973.2-3
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