[O-S]Technical Program
T. Arizumi、M. Hatoyama、J. Bok(1.Nagoya University、2.Sony Corporation、3.Ecole Normale Superieure)
1973 International Conference on Solid State Devices
1973年8月29日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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検索する
1973 International Conference on Solid State Devices
1973年8月29日〜8月31日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(107)
[O-2]FUTURE TRENDS IN SOLID STATE ELECTRONICS
S. Triebwasser(1.IBM Thomas J. Watson Research Center)
[O-3]SILICON INTEGRATED CIRCUIT TECHNOLOGY
M. P. Lepselter(1.Bell Telephone Laboratories, Inc.)
[O-4]RECENT ADVANCES IN OPTOELECTRONIC DISPLAYS AND MATERIALS
P J Dean(1.Royal Radar Establishment)
[O-5]Electronic and Structural Effects in Chalcogenide Glasses
H. Fritzsche(1.The James Franck Institute The University of Chicago)
[S-1]Microwave Device
G. S. Kino、K. Heime(1.Stanford University、2.Rheinisch-Westfalische Technische)
[1-1]CHARACTERISTICS OF THE TRANSFERRED ELECTRON EFFECT
H D REES(1.ROYAL RADAR ESTABLISHMENT)
[1-2]GaAs DDR (Double-Drift-Region) IMPATT Diodes Made by A Successive Liquid Phase Epitaxy
Atsutoshi Doi、Masatoshi Migitaka(1.Central Research Laboratory, Hitachi Ltd.)
[1-3]Completely Planar GUNN-Effect Devices and Circuits
K.-H. BACHEM、J. ENGEMANN、K. HEIME(1.Institute for Semiconductor Technique/Special Research Branch "Solid State Electronics" of the German Research Society Rheinisch-Westfalische Technische Hochschule)
[1-4]Liquid phase epitaxy of high purity n-GaSb and InxGa1-xSb and their electron transfer effects
Akimichi Hojo、Isamu Kuru(1.Toshiba R and D Center, Electron Devices Lab.)
[1-5]Velocity-Field Characteristics and Current Oscillation in III-V Mixed Crystals, GaSbxAs1-x and InxGa1-xAs
Masataka INOUE、Kazumi ASHIDA、Takashi SUGINO、Junji SHIRAFUJI、Yosio INUISHI(1.Faculty of Engineering, Osaka University)
[1-6]PROGRESS OF MICROWAVE SOLID STATE DEVICES IN JAPAN
MICHIYUKI UENOHARA(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[1-7]NEW MODE OF OPERATION FOR AVALANCHE DIODES: HIGH RANK, HIGH EFFICIENCY FREQUENCY MULTIPLIERS
P. A. ROLLAND、G. SALMER、M. CHIVE J. MICHEL(1.Centre de Recherches sur les Proprietes Hyperfrequences des Milieux Condenses, Universite des Sciences et Techniques de LILLE、2.Laboratoire d'Electronique et de Physique Appliquee)
[1-8]P+-Graded Junction-N+ High-Efficiency Avalanche (TRAPATT) Diode
H. Kawamoto(1.RCA Corporation David Sarnoff Research Center)
[1-9]Computer study of TRAPATT
Shinya HASUO、Toyosaku ISOBE(1.Fujitsu Laboratories, Ltd.)
[1-10]THERMAL EQUIVALENT CIRCUIT OF TRAPATT - DIODE
P. K. CHATURVEDI、W. S. KHOKLE(1.Central Electronics Engineering Research Institute)
[S-2]Ion Implantation
S. Namba、A. U. Mac Rae(1.Osaka University、2.Bell Laboratories)
[2-1]Bipolar Transistors made by Ion Implantation
A. U. Mac Rae(1.Bell Laboratories)
[2-2]ANALITICAL CALCULATION OF THE VACANCY DISTRIBUTION AND THE SEMICONDUCTOR AMORPHIZATION DOSE DURING ION IMPLANTATION
V. V. YUDIN(1.Ministry of Electronic Industry)
[2-3]PROTON-ENHANCED DIFFUSION OF As IN Si FROM A DOPED POLYCRYSTALLINE SOURCE (DOPOS)
J. F. Gibbons、J. R. MacDonald、R. E. Tremain(1.Department of Electrical Engineering, Stanford University)
[2-4]Anomalous Enhancement of Etching Rate of Silicon Nitride with HF Etchant by Ion Implantation
Y. Akasaka、K. Horie K. Nomura、S. Kawazu(1.Central Research Laboratory, Mitsubishi Electric Corp.、2.Kitaitami Works)
[2-5]Ion Implantation into MOS Structures
Takashi Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[2-6]Crystal Defects in Ion-Implanted GaAs
M. Tamura、T. Miyazaki、N. Natsuaki(1.Central Research Laboratory, Hitachi Ltd.)
[2-7]P-TYPE ZINC SULPHIDE PRODUCTION BY ION IMPLANTATION OF SILVER
Georgobiani A. N.、Kotlyrevskiy M. ь.、Noskov D. A.、Zlobin V. N.、Shumilov V.、Generalov Yu. P.(1.P. N. Lebedev Physical Institute Academy of Sciences Of the USSR)
[2-8]Ion Implanted ZnSe p-n Junction Devices
Y. S. Park、B. K. Shin(1.Aerospace Research Laboratories、2.Systems Research Laboratories, Inc.)
[2-9]Mn-IMPLANTED ZnS THIN FILM ELECTROLUMINESCENT CELL
TOSHINORI TAKAGI、ISAO YAMADA、AKIO SASAKI、TOYOTSUGU ISHIBASHI(1.Department of Electronics, Kyoto University)
[S-3]Optoelectronic Device (I)
P. Dean I. Hayashi(1.Royal Radar Establishment、2.Nippon Electric Co., Ltd.)
[3-1]SPECTRAL AND SPATIAL BEHAVIOR OF LUMINESCENCE FROM THE ACTIVE LAYER OF GaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTUER LASER DIODES
O. NAKADA、R. ITO、H. NAKASHIMA、N. CHINONE(1.Central Research Laboratory, Hitachi, Ltd.)
[3-2]Visible Light-Emitting Semiconductor Lasers of Double Heterostructure
Kunio Itoh(1.Research Laboratory, Matsushita Electronics Corp.)
[3-3]Heterostructure CdS1-xSex Surface Lasers
Mitsuo Kawabe、Hideo Kotani、Kohzoh Masuda、Susumu Namba(1.Faculty of Engineering Science, Osaka University)
[3-4]Degradation of AlxGa1-xAs Double Heterostructure Lasers
H. Yonezu、I. Sakuma、T. Kameshima、S. Ueno、K. Kobayashi、K. Nishida Y. Nannichi、I. Hayashi(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[3-5]High Gain Stimulated Emission and Nonlinear Photoconductivity in GaSe
N. KURODA、T. NAKANOMYO、Y. NISHINA(1.Research Institute for Iron, Steel and Other Metals, Tohoku University)
[3-6]AN UNIDIRECTIONAL LASER AMPLIFIER BY HOT ELECTRONS IN SEMICONDUCTOR
M. Yamanishi、T. Minami、T. Kawamura(1.Department of Electrical Engineering, University of Osaka Prefecture)
[3-7]PARAMETRIC AMPLIFICATION, OSCILLATION AND MIXING IN NONLINEAR BACKWARD SCATTERING
Hsiung Hsu、Chung Yu(1.The Ohio State University, Department Of Electrical Engineering)
[3-8]Efficient Infrared Upconversion Display Devices
Yoh Mita、Eiji Nagasawa、Ken-ichi Shiroki、Tetsujin Matsubara(1.Central Research Laboratories, Nippon Electric Co. Ltd.)
[S-4]Optoelectronic Device (II)
K. Maeda H. Fritzsche(1.Tokyo Shibaura Electric Co., Ltd、2.The University of Chicago)
[4-1]Interaction of Light Beams in Semiconductor Laser Diode
Jun-ichi Nishizawa(1.Research Institute of Electrical Communication, Tohoku University)
[4-2]Concentration Profile of Zn-O Complex Centers in GaP Red-Emitting Diodes
Hiroshi KUKIMOTO、Masashi MIZUTA(1.Imaging Science & Engineering Lab., Tokyo Institute of Technology)
[4-4]DETERMINATION OF THE SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP
A. S. Jordan、A. Von Neida、R. Caruso、C. K. Kim(1.Bell Laboratories)
[4-5]The Photo-Doping of Metal into Chalcogenide Glasses
Eiichi INOUE、Hiroshi KOKADO、Isamu SHIMIZU(1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)
[4-6]Some Aspects of the Reversible Optical Effect in (Se, S)-Based Chalcogenide Glasses
Takeo Igo、Yoshio Toyoshima(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[4-7]Amorphous Semiconductor Photovoltaic Devices with Integrated Memory Functions
T. Morikawa、S. Kawase、T. Nakajima、K. Sakurai(1.Electrotechnical Laboratory)
[4-8]Electrooptical Memory Effect in ZnxInySz Compounds
C. Paorici N. Romeo(1.Lab. MASPEC del C.N.R. - Parma、2.C.N.R. - G.N.S.M. Istituto di Fisica-Universita)
[S-5]Charge Transfer Device
M. Uenohara(1.Nippon Electric Co., Ltd.)
[5-1]AN OVERVIEW OF CHARGE COUPLED DEVICES
G. E. SMITH(1.BELL LABORATORIES)
[5-2]Bulk Charge Transfer Device
I. Takemoto、H. Sunami、S. Ohba、M. Aoki、M. Kubo(1.Central Research Laboratory, Hitachi Ltd.)
[5-3]Recent Advances in the Plasma-Coupled Device
T. Suzuki、K. Kawarada、Y. Yamamoto、T. Shibata、H. Kodama、A. Tamama(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[5-4]THE BUCKET BRIGADE AND OTHER CHARGE TRANSFER DEVICES
F. L. J. Sangster(1.Philips Research Laboratories)
[5-5]An Improved Self-Scanned Linear Photosensor Array
N. Koike、T. Kamiyama、M. Ashikawa(1.Hitachi Central Research Laboratory)
[S-6]New Device & Technology (I)
L. Esaki M. Nagata(1.IBM、2.Hitachi Ltd.)
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