1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-2-3]DESIGN LIMITATION DUE TO SUBSTRATE CURRENTS AND SECONDARY IMPACT IONIZATION ELECTRONS IN NMOS LSI'S

Junichi Matsunaga、Masami Konaka、Susumu Kohyama、Hisakazu Iizuka(1.Research Laboratory NEC-TOSHIBA Information Systems Inc.)
https://doi.org/10.7567/SSDM.1979.A-2-3
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