[A-0-1]Recent Progress and Potential of SIT
Jun-ichi Nishizawa(1.Research Institute of Electrical Communication、2.Tohoku University)
1979 International Conference on Solid State Devices
1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1979 International Conference on Solid State Devices
1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(125)
[A-0-2]MOS Devices Fabricated by Electron Beam Lithography
H. N. Yu(1.IBM T. J. Watson Research Center)
[A-0-3]BASIC TECHNOLOGY FOR VLSI
Yasuo Tarui(1.Cooperative Laboratories、2.VLSI Technology Research Association)
[A-0-4]Recent Progress in Semiconductor Lasers
Izuo Hayashi(1.Central Research Laboratories Nippon Electric Co., Ltd.)
[A-1-1]Microstructure Fabrication, Science and Technology
E. D. Wolf(1.Cornell Univ.)
[A-1-2]X-Ray Lithography
Shin'ichi YAMAZAKI、Toa HAYASAKA(1.Musashino Electrical Communication Laboratory、2.N.T.T.)
[A-1-3]Electron Image Projection
P. J. Daniel R. Kramer(1.Philips Research Laboratories)
[A-1-4]1:4 Demagnifying Electron Projection System
T. Asai、S. Ito、T. Eto、M. Migitaka(1.Cooperative Laboratories VLSI Technology Research Association)
[A-1-5]Electron Beam Mask Fabrication for MOSLSI's with 1 μm - 1.5 μm Design Rules
Shinji Okazaki、Kozo Mochiji、Eiji Takeda、Yoji Maruyama、Shojiro Asai(1.Central Research Laboratory、2.Hitachi, Ltd.)
[A-1-6]Reactive Sputter Etching System with Floating Grid
H. Shibayama、T. Ogawa、K. Kobayashi、T. Hisatsugu(1.FUJITSU LABORATORIES LTD.)
[A-1-7]Low-frequency Low-noise Transistors Fabricated by Double Ion Implantation
K. Yagi、M. Tamura、Y. Yanagi、K. Inaniwa、T. Tokuyama(1.Central Reseach Laboratory、2.Hitachi Ltd. Takasaki Works、3.Hitachi Ltd.)
[A-1-8]Computer Aided Si-MOSFET Process Designing
Yasuo Ohno、Yuju Okuto(1.Central Research Labs、2.Nippon Electric Co., Ltd.)
[A-1-9]Deposition of Silicon Nitride Films by High Rate Reactive Sputtering
Y. Hoshi、M. Naoe、S. Yamanaka(1.Faculty of Engineering、2.Tokyo Institute of Technology)
[B-1-1]LSI Prospects for GaAs FET's
R. Zuleeg(1.McDonnell Douglas Astronautics Company)
[B-1-2]MSI HIGH SPEED LOW POWER GaAs INTEGRATED CIRCUITS
S. I. Long、B. M. Welch、R. C. Eden、F. S. Lee、R. Zucca(1.Rockwell International/Science Center)
[B-1-3]Low-Power High-Speed Integrated Logic with GaAs MOSFETs
Naoki Yokoyama、Takashi Mimura、Hirotsugu Kusakawa、Katsuhiko Suyama、Masumi Fukuta(1.Fujitsu Limited)
[B-1-4]High-Speed Enhancement-Mode GaAs MESFET Integrated Circuits
T. Mizutani、N. Kato、S. Ishida、K. Asai、Y. Sakakibara、K. Komatsu、M. Ohmori(1.Musashino Electrical Communication Laboratory、2.Nippon Telegraph and Telephone Public Corporation)
[B-1-5]Integrated GaAs E-FET/Tunnel Diode Inverter and Memory Cell
Kurt Lehovec(1.University of Southern California)
[B-1-6]Power GaAs MESFETs with a Graded Recess Structure
Asamitsu HIGASHISAKA、Takashi FURUTSUKA、Yoichi AONO、Yoichiro TAKAYAMA、Fumio HASEGAWA(1.Central Research Laboratories、2.Nippon Electric Co., Ltd.)
[B-1-7]Flip-Chip Mounted GaAs Power FET with Improved Performance in X to Ku Band
Y. Mitsui、M. Kobiki、M. Wataze、M. Otsubo、T. Ishii、S. Mitsui(1.Semiconductor Laboratory、2.Mitsubishi Electric Corporation)
[A-2-1]Physical Effects in Short Channel MOS
Dr. John L. Moll、Dr. Edward Sun(1.Hewlett-Packard Laboratories)
[A-2-2]Non-thermal Carrier Generation in MOS Structures
Susumu KOHYAMA、Shouichi MIMURA、Hisakazu IIZUKA(1.Semiconductor Device Engineering Lab. Toshiba Corporation)
[A-2-3]DESIGN LIMITATION DUE TO SUBSTRATE CURRENTS AND SECONDARY IMPACT IONIZATION ELECTRONS IN NMOS LSI'S
Junichi Matsunaga、Masami Konaka、Susumu Kohyama、Hisakazu Iizuka(1.Research Laboratory NEC-TOSHIBA Information Systems Inc.)
[A-2-4]Near Ideal Si-SiO2 Interface
L. A. Kasprzak、A. K. Gaind(1.IBM Data Systems Division)
[A-2-5]ON Al-SiO2 INTERFACES AND OXIDATION TEMPERATURES
M. Av-Ron、M. Shatzkes、T. DiStefano、R. Gdula(1.IBM Data Systems Division T. J. Watson Research Center)
[A-2-6]Anodization of Silicon in RF induced Oxygen Plasma
Ho Quoc VU、Takuo SUGANO(1.Department of Electronic Engineering、2.the University of Tokyo)
[A-2-7]P-CHANNEL VERSUS N-CHANNEL IN MOS-ICs OF SUBMICRON CHANNEL LENGTHS
Luong Mo DANG、Hiroshi IWAI、Yoshio NISHI、Shinji TAGUCHI(1.Toshiba R & D Center、2.Toshiba Corporation c/o Horikawacho Works)
[A-3-1]Mechanisms of Laser Annealing
J. M. Poate(1.Bell Laboratories)
[A-3-2]APPLICATIONS OF SCANNING CW LASER AND ELECTRON BEAMS IN SEMICONDUCTOR PROCESSING
J. F. Gibbons(1.Stanford Electronics Laboratories)
[A-3-3]Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing
M. Miyao、M. Koyanagi、H. Tamura、N. Hashimoto、T. Tokuyama(1.Central Research Laboratory、2.Hitachi Ltd.)
[A-3-4]Resistivity Reduction of Polycrystalline Silicon Films by Laser Annealing
Susumu KOHYAMA、Shinji ONGA、Kenji SHIBATA、Hisakazu IIZUKA(1.Semiconductor Device Engineering Lab. Toshiba Corporation)
[A-3-5]Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs
B. J. Sealy、M. H. Badawi、K. G. Stephens(1.Department of Electronic and Electrical Engineering、2.University of Surrey)
[A-3-6]Is SOS ready for VLSI?
J. BOREL(1.LETI-EFCIS)
[A-3-7]High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation
Katsutoshi Izumi、Masanobu Doken、Hisashi Ariyoshi(1.Research and Development Bureau、2.and Musashino Electrical Communication Laboratory N.N.T.)
[A-3-8]Charge Pumping Memory with SOS-MOS Transistors
N. Sasaki、M. Nakano、T. Iwai(1.IC Division、2.Fujitsu Limited)
[A-3-9]Electron-Hole Pair Generation at the Silicon-Sapphire Interface of SOS Devices
K. Lehovec、Shi-Tron Lin(1.University of Southern California)
[A-4-1]Yield Modeling of Bipolar Integrated Circuits
D. Kranzer、H. Murrmann(1.Siemens AG、2.Integrated Circuit Division)
[A-4-2]A High Speed Schottky 4k-bit PROM using Diffused Eutectic Aluminum Process (Deap)
Toshitaka Fukushima、Koji Ueno(1.IC Division、2.Fujitsu Lid.)
[A-4-3]A New Transistor Structure for High Speed Bipolar LSI
H. Sakurai、Y. Akasaka、K. Kijima(1.LSI Development Laboratory、2.Mitsubishi Electric Corporation)
[A-4-4]A single-chip speech synthesizer for the PARCOR CODEC
N. Miyahara、S. Yamada、M. Yamane、K. Saito、E. Arai、M. Sunazawa(1.Musashino Electrical Communication Laboratory、2.N.T.T.)
[A-4-5]ADAPTIVE WAFER SCALE INTEGRATION
Yukun Hsia、Gareth C. C. Chang、F. Dennis Erwin(1.McDonnell Douglas Astronautics Company)
[A-4-6]A 3000-Gate CMOS Masterslice LSI
M. Ashida、R. Hoshikawa、N. Matsumura、J. Ishii、H. Ichikawa、Y. Sugiura、K. Inayoshi(1.Fujitsu Limited、2.IC Division)
[B-2-1]Interface Effects on Drain Current Instabilities in GaAs MESFETs with Buffer Layer
T. Itoh、H. Yanai(1.Department of Electronic Engineering、2.University of Tokyo)
[B-2-2]Investigation on the Drift of GaAs MESFET's by High Frequency Parameters
K. Ohata、H. Itoh、F. Hasegawa(1.Central Research Laboratories、2.Nippon Electric Co., Ltd.)
[B-2-3]Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices
N. Arnold、H. Dambkes、K. Heime(1.University of Duisburg、2.FB 9、3.Solid-State Electronics Department)
[B-2-4]A New Type GaAlAs Monolithic Lensed LED
M. Abe、O. Hasegawa、Y. Komatsu、Y. Toyama(1.Fujitsu Laboratories Limited)
[B-2-5]High-Brightness Green-Light Emitting Thin-Film Electroluminescent Device
K. Okamoto、Y. Hamakawa(1.Faculty of Engineering Science、2.Osaka University)
[B-2-6]Bright Pure Green Emission from N-free GaP LED's
J. Nishizawa、Y. Okuno、M. Koike、F. Sakurai(1.Research Institute of Electrical Communication、2.Tohoku University Semiconductor Research Institute)
[B-2-7]pInxGa1-xSb-nGa1-yAlySb Heterojunction Photodiodes
T. Mizuki、Y. Sugimoto、A. Tanaka、T. Sukegawa(1.Research Institute of Electronics、2.Shizuoka University)
[B-3-1]Mode Control in Semiconductor Lasers
Ryoichi Ito(1.Central Research Laboratory、2.Hitachi, Ltd.)
125 件中 ( 1 - 50 )
- 1