1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-2-7]P-CHANNEL VERSUS N-CHANNEL IN MOS-ICs OF SUBMICRON CHANNEL LENGTHS

Luong Mo DANG、Hiroshi IWAI、Yoshio NISHI、Shinji TAGUCHI(1.Toshiba R & D Center、2.Toshiba Corporation c/o Horikawacho Works)
https://doi.org/10.7567/SSDM.1979.A-2-7
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