1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-7]High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation

Katsutoshi Izumi、Masanobu Doken、Hisashi Ariyoshi(1.Research and Development Bureau、2.and Musashino Electrical Communication Laboratory N.N.T.)
https://doi.org/10.7567/SSDM.1979.A-3-7
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