1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-1-6]Power GaAs MESFETs with a Graded Recess Structure

Asamitsu HIGASHISAKA、Takashi FURUTSUKA、Yoichi AONO、Yoichiro TAKAYAMA、Fumio HASEGAWA(1.Central Research Laboratories、2.Nippon Electric Co., Ltd.)
https://doi.org/10.7567/SSDM.1979.B-1-6
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