1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

1979年8月27日〜8月29日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-1]Interface Effects on Drain Current Instabilities in GaAs MESFETs with Buffer Layer

T. Itoh、H. Yanai(1.Department of Electronic Engineering、2.University of Tokyo)
https://doi.org/10.7567/SSDM.1979.B-2-1
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