1980 Conference on Solid State Devices

1980 Conference on Solid State Devices

1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1980 Conference on Solid State Devices

1980 Conference on Solid State Devices

1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-1]LPE and Characteristics of GaInAsP/InP 1.5μm Region Laser Diodes

H. Nagai(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
https://doi.org/10.7567/SSDM.1980.B-2-1
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