[A-0-0]VLSI and Artificial Intelligence Problems in the 80s the Computer Industry will Face
Taiyu Kobayashi(1.Fujitsu Limited)
1980 Conference on Solid State Devices
1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1980 Conference on Solid State Devices
1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(56)
[A-0-1]Heterostructures for Everything: Device Principles of the 1980's?
Herbert Kroemer(1.Electrical and Computer Engineering, University of California)
[A-1-1]MOSFET DEVELOPMENT IN IBM - 1963 TO PRESENT
D. L. Critchlow(1.Data Systems Division, International Business Machines Company)
[A-1-2]BOW AND WARPAGE OF SILICON WAFERS
Shin. Takasu、H. Otsuka、N. Yoshihiro、T. Oku、M. Ishida(1.VLSI Cooperative Laboratories)
[A-2-1]Thermal Nitridation of Silicon in Advanced LSI Processing
T. Ito、H. Ishikawa、Y. Fukukawa(1.FUJITSU LABORATORIES LTD.)
[A-2-2]Silicon Graphoepitaxy
Michael W. GEIS、Dale C. FLANDERS、Donald J. SILVERSMITH、Dimitri A. ANTONIADIS、Henry I. SMITH(1.Lincoln Laboratory, Massachusetts Institute of Technology)
[A-2-3]Oriented Crystal Growth of Si on SiO2 Patterns by Pulse Ruby Laser Annealing
M. Tamura、H. Tamura、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-4]Formation of a Double-Hetero Si/CoSi2/Si Structure Using Molecular Beam and Solid Phase Epitaxies
Shuichi Saitoh、Hiroshi Ishiwara、Seijiro Furukawa(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-2-5]A New Self-Aligned Framed Mask Method for Selective Oxidation
K. Minegishi、K. Imai、K. Kiuchi、K. Hirata、Y. Yoriume(1.Musashino Electrical Communication Laboratory, NTT)
[A-2-6]Negative Patterning of AZ1350J by Electron-beam Desensitization of Photo-sensitive Compound
Kozo Mochiji、Yoji Maruyama、Fumio Murai、Shinji Okazaki Yutaka Takeda、Shojiro Asai(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-7]High Resolution Fabrication of Submicron Structures by Ion Beam Lithography
Kazuyuki Moriwaki、Hiroaki Aritome、Susumu Namba(1.Faculty of Engineering Science, Osaka University)
[B-1-1]Fibre Optics Development in the 1980s
C. Kao(1.ITT)
[B-1-2]RECENT PROGRESS IN VAD FIBER FABRICATION PROCESS
Nobuo INAGAKI、Takao EDAHIRO、Motohiro NAKAHARA(1.Ibaraki Electrical Communication Laboratory, N.T.T.)
[B-2-1]LPE and Characteristics of GaInAsP/InP 1.5μm Region Laser Diodes
H. Nagai(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[B-2-2]LOW EPD AND HIGH AVALANCHE GAIN OF LATTICE-MISMATCHED In0.52Ga0.48As DIODES ON InP SUBSTRATE
Y. Takeda、A. Sasaki(1.Department of Electrical Engineering, Kyoto University)
[B-2-3]Integration of a laser diode and a twin FET
Hideaki Matsueda、Tadashi Fukuzawa、Takao Kuroda、Michiharu Nakamura(1.Central Research Laboratory, Hitachi Ltd.)
[B-2-4]In-Line Holographic Lenses of High Numerical Aperture
C. Kojima、K. Miyahara、K. Hasegawa、T. Otobe、H. Ohki(1.Sony Corporation Research Center、2.Sony Corporation Audio Technology Center)
[B-2-5]Visible Semiconductor Laser
W. Susaki、S. Takamiya(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
[B-2-6]LPE Growth and Photoluminescence of Visible-Semiconductor-Laser Material In1-xGaxP1-yAsy on GaAs
A. Suzuki、H. Kyuragi、S. Matsumura、H. Matsunami(1.Department of Electronics, Kyoto University)
[B-2-7]Low-Threshold-Voltage AC Thin-Film Electroluminescent Device
K. OKAMOTO、Y. NASU、M. OKUYAMA、Y. HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
[A-3-1]A SIPOS-Si Heterojunction Transistor
Takeshi Matsushita、Hisao Hayashi、Norikazu Oh-uchi、Hisayoshi Yamoto(1.Semiconductor Division, SONY Corporation)
[A-3-2]V-Bipolar Device Utilizing Built-in Stress Gradient
Yozo Kanda(1.Department of Physics, Hamamatsu University School of medicine)
[A-3-3]Gain Improvement by Self-Neutralization of Microwave SIT
Masao Aiga、Yukio Higaki、Mari Kato、Yoshinori Yukimoto(1.Mitsubishi Electric Corporation, LSI Research and Development Laboratory)
[A-3-4]Design Considerations for High Power GTOs
Makoto Azuma、Mamoru Kurata、Hiromichi Ohashi(1.Toshiba Research and Development Center)
[A-3-5]4000V, 1500A Light Triggered Thyristor
T. Nakagawa、T. Miyajima、A. Kawakami、A. Tada、K. Yamanaka、K. Ohtaki(1.Kitaitami Works, Mitsubishi Electric Corporation、2.LSI R & D Lab., Mitsubishi Electric Corporation)
[A-3-6]A HIGH CURRENT GAIN, HIGH SPEED POWER GATE ASSOCIATED TRANSISTOR
Hisao KONDO、Yoshinori YUKIMOTO(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
[A-3-7]150V High Voltage Linear IC Technology
I. IMAIZUMI、M. KIMURA、M. YOSHIMURA、T. YAMAGUCHI(1.Central Research Laboratory, Hitachi Ltd.、2.Musashi Works, Hitachi Ltd.)
[A-4-1]High Speed MoSi2 gate CMOS/SOS Devices
Yoshihisa MIZUTANI、Kenji MAEGUCHI、Tohru MOCHIZUKI Minoru KIMURA、Mitsuo ISOBE、Yukimasa UCHIDA、Hiroyuki TANGO(1.Semiconductor Device Engineering Laboratory TOSHIBA CORPORATION)
[A-4-2]High Speed 4 k bit Static RAM with Silicide Coated Wiring
M. Morimoto、M. Sugimoto、K. Terada、K. Takahashi、T. Ishijima、H. Muta、S. Suzuki(1.Central Research Labs., Nippon Electric Co., Ltd.)
[A-4-3]Custom LSI Process with a Micron Geometry, Partially Using Electron Beam Direct Writing
N. Endo、Y. Kurogi、K. Suzuki、M. Sugimoto、M. Morimoto、Y. Iida、K. Mori(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[A-4-4]N-channel MNOS EAROM for TV Electronic Tuning System
S. Saito、K. Hashimoto、Y. Uchida、N. Endo(1.Semiconductor Device Engineering Laboratory Toshiba Corporation)
[A-4-5]Soft Error Improvement in MOS RAM's by the use of Epitaxial Substrate
S. SATOH、M. DENDA、T. FUKUMOTO(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[A-4-6]Flat Emitter Transistor with Self-Aligned Base
T. Fujita、H. Yamada、T. Takemoto、T. Komeda(1.Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd.)
[A-4-7]High Speed Bipolar ICs Using Super Self-aligned Process Technology
T. Sakai、Y. Kobayashi、H. Yamauchi、M. Sato、T. Makino(1.Nippon Tel-Tel Public Corp. Musashino Electrical Communication Lab.)
[A-4-8]A High Performance I2L Compatible with Sub-nanosecond ECL devices
T. Hirao、K. Murakami、H. Sakurai(1.LSI R&D, Mitsubishi Electric Corporation)
[B-3-1]ION IMPLANTATION INTO COMPOUND SEMICONDUCTORS
H. Nishi、H. Hashimoto(1.Fujitsu Limited)
[B-3-2]Planar GaAs ICs Using Multiple Localized Ion-Implantation
H. Kusakawa、K. Suyama、S. Okamura、M. Fukuta(1.Fujitsu Limited)
[B-3-3]P-Column Gate Field Effect Transistor
K. Asai、Y. Ishi-i、Y. Kawasaki、K. Kurumada(1.Musashino Electrical Communication Lab., NTT Public Corporation)
[B-3-4]Improvement in CZ Wafers by Reducing Oxygen Impurity
Keigo Hoshikawa、Hiroki Kohda、Kenji Ikuta(1.Musashino Electrical Communication Laboratory, NTT)
[B-3-5]Non-destructive Analysis of the Si-SiO2 interface by Electron Energy Loss Spectroscopy Study
T. Ito、M. Iwami、A. Hiraki(1.Department of Electrical Engineering, Osaka University)
[B-3-6]Effect of Long Term Stress on Hot Electron Trapping
H. MATSUMOTO、K. SAWADA、S. ASAI、M. HIRAYAMA、K. NAGASAWA(1.LSI R & D Laboratory, Mitsubishi Electric Corp.)
[B-3-7]Isothermal Capacitance Transient Spectroscopy
Hideyo OKUSHI、Yozo TOKUMARU(1.Electrotechnical Laboratory)
[B-4-1]Optical, Electrical and Structural Properties of Plasma-Deposited Amorphous Silicon
K. Tanaka、K. Nakagawa、A. Matsuda、M. Matsumura、H. Yamamoto、S. Yamasaki、H. Okushi、S. Iizima(1.Electrotechnical Laboratory)
[B-4-2]Properties of a Fluorinated Heat-Resisting Amorphous-Silicon Containing no Hydrogen
Hideki MATSUMURA、Seijiro FURUKAWA(1.Department of Applied Electronics, Tokyo Institute of Technology)
[B-4-3]Novel Deposition Technique of a-Si:H -- Silane Glow Discharge in Magnetic Field --
T. Hamasaki、M. Hirose、H. Kurata、M. Taniguchi、Y. Osaka(1.Department of Electrical Engineering, Hiroshima University)
[B-4-4]Improvement of The Open Circuit Voltage of Amorphous Silicon Solar Cells
Setsuo Kaneko、Takeshi Saito(1.Central Research Laboratories, Nippon Electric Company, Ltd.)
[B-4-5]Amorphous SixGe1-x for High Performance Solar Cells
G. Nakamura、K. Sato、Y. Yukimoto、K. Shirahata、T. Murahashi、K. Fujiwara(1.Semiconductor R & D Dept., LSI Research and Development Laboratory, Mitsubishi Electric Corp.)
[B-4-6]Fabrication and Properties of Diffused Solar Cells Using Solar-Grade Silicon Prepared by Fluidized-Bed Reactor
S. Matsubara、E. Kuroda、T. Warabisako、T. Saitoh、T. Tokuyama Y. Enomoto、K. Kaneko、N. Hasegawa(1.Central Research Laboratory, Hitachi Ltd.、2.Research & Development Laboratory, Shin-Etsu Chemical Co. Ltd.)
[B-4-7]Electrophotographic Properties of RF Discharge-Produced Amorphous Si:H Film
Nobuyuki YAMAMOTO、Yoshikazu NAKAYAMA、Kazuki WAKITA、Masao NAKANO、Takao KAWAMURA(1.College of Engineering, University of Osaka Prefecture)
[B-4-8]A Proposed Novel Amorphous-Silicon Image Sensor
Hiroshi Hayama、Yasuo Nara、Kohichiro Ishibashi、Masakiyo Matsumura(1.Department of Physical Electronics, Tokyo Institute of Technology)
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