1980 Conference on Solid State Devices

1980 Conference on Solid State Devices

1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1980 Conference on Solid State Devices

1980 Conference on Solid State Devices

1980年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-4-7]Electrophotographic Properties of RF Discharge-Produced Amorphous Si:H Film

Nobuyuki YAMAMOTO、Yoshikazu NAKAYAMA、Kazuki WAKITA、Masao NAKANO、Takao KAWAMURA(1.College of Engineering, University of Osaka Prefecture)
https://doi.org/10.7567/SSDM.1980.B-4-7
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