1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-4]A New Method of Characterizing the In-depth Profile of Thermally Induced Defects in CZ Si

Hiroshi NAKAYAMA、Johji KATSURA、Taneo NISHINO、Yoshihiro HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.1981.A-3-4
PDFダウンロードPDFダウンロード
戻る