[A-0-1]Fine Focused Ion Beams
R. L. Seliger、R. L. Kubena、V. Wang(1.Hughes Research Laboratories)
1981 Conference on Solid State Devices
1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1981 Conference on Solid State Devices
1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(66)
[A-0-2]Solution Growth of II-VI Compounds
M. Aoki、M. Washiyama、H. Nakamura、K. Sakamoto(1.Depertment of Electronic Engineering, Faculty of Engineerng, University of Tokyo)
[A-1-1]A Potential of Bipolar VLSI
Minoru Nagata(1.Central Research Labolatory, Hitachi Ltd.)
[A-1-2]A High-speed I2L Process / Structure for VLSI
T. Hirao、H. Ishikura、S. Ohsaki、N. Tsubouchi(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[A-1-3]Quasi-Three-Dimensional Approach to Transient Analysis of I2L Devices
Koji Hanihara、Takeshi Kamiya、Hisayoshi Yanai(1.Department of Electronic Engineering, Faculty of Engineering, University of Tokyo)
[A-1-4]U-groove Isolation Technology for High Density Bipolar LSI's
Y. Tamaki、T. Kure、T. Shiba、H. Higuchi(1.Central Research Labolatory, Hitachi Ltd.)
[A-2-1]VLSI Fine Technology and Its Problems
Eisuke ARAI(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and、2.Telephone Public Corporation)
[A-2-2]SOS CMOS 16 bit Parallel Multiplier
Masao Fukuma、Yasuo Ohno、Yuji Okuto(1.Basic Technology Research Labs., Nippon Electric Co., Ltd.)
[A-2-3]A Low Power 8 Bit Parallel A/D Converter with High Accuracy Process
T. Takemoto、M. Inoue、H. Sadamatsu、A. Matsuzawa、Y. Hirofuji、T. Komeda(1.Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd.)
[A-2-4]Threshold Difference Compensating Sense Amplifier for High Density Dynamic MOS RAM's
T. Furuyama、S. Saito、S. Fujii(1.Semiconductor Device Engineering Laboratory Toshiba Corporation)
[A-2-5]Dependency of Channel Hot-Electron Injection on MOSFET Structure
Hitoshi Kume、Eiji Takeda、Toru Toyabe、Shojiro Asai(1.Central Research Laboratory, Hitachi, Ltd.)
[A-2-6]Soft Error Rate Analysis Model(SERAM) for Dynamic NMOS RAMs
Masaaki Aoki、Toru Toyabe、Takashi Shinoda、Toshiaki Masuhara、Shojiro Asai、Hiroshi Kawamoto、Kazumichi Mitsusada(1.Central Research Laboratory, Hitachi Ltd.、2.Device Development Center, Hitachi Ltd.)
[A-2-7]Novel High Alpha-Particle-Immunity and High Density d-RAM Cell
Toshiaki TSUCHIYA、Sigeru NAKAJIMA(1.Musashino Electrical Communication Laboratory)
[A-2-8]A Proposition to Scale Down MNOS Nonvolatile Memory Devices
Yuji Yatsuda、Takaaki Hagiwara、Shin'ichi Minami、Ryuji Kondo、Ken Uchida、Kyotake Uchiumi(1.Central Research Laboratory, Hitachi Ltd.、2.Musashi Works, Hitachi Ltd.)
[A-2-9]Novel Gate Structure for High Voltage Light-Triggered Thyristor
H. Ohashi、T. Tsukakoshi、T. Ogura、Y. Yamaguchi(1.Toshiba Research and Development Center)
[A-2-10]High Voltage Low On-Resistance VDMOS FET
A. Nakagawa、J. Yoshida、T. Utagawa、T. Tsukakoshi、H. Tanabe、T. Kuramoto(1.Toshiba R & D Center、2.Toshiba Transistor Works)
[B-1-1]Chemical Amplification in Biosensors
Masuo Aizawa(1.Institute of Materials Science, University of Tsukuba)
[B-1-2]Pyroelectric Si-monolithic Sensor Using PbTiO3 Thin Film
M. Okuyama、H. Seto、M. Kojima、Y. Matsui、Y. Hamakawa(1.Faculty of Engineering Science, Osaka University)
[B-1-3]Platinum Silicide Schottky-Barrier IR-CCD Image Sensors
M. KIMATA、M. DENDA、T. FUKUMOTO、N. TSUBOUCHI、S. UEMATSU、H. SHIBATA、R. HIGUCHI、T. SAEKI R. TSUNODA、T. KANNO(1.Mitsubishi Electric Corporation、2.Technical Research & Development Institute, Japan Defence Agency)
[B-1-4]A CCD Imager Using ZnSe-Zn1-xCdxTe Heterojunction Photoconductor
Y. Terui、M. Yoshino、M. Ogura、M. Nakayama、T. Chikamura、S. Horiuchi(1.Matsushita Central Research Laboratories)
[B-2-1]An Amorphous Si High Speed Linear Image Sensor
T. Hamano、H. Ito、T. Nakamura、T. Ozawa、M. Fuse、M. Takenouchi(1.Fuji Xerox Co., Ltd.)
[B-2-2]Amorphous Silicon Photoconsensor
Toshiaki KAGAWA、Nobuo MATSUMOTO、Kenji KUMABE(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[B-2-3]Experimental Study of Amorphous Silicon Integrated Circuit
Yasuo Nara、Masakiyo Matsumura(1.Department of Physical Electronics, Tokyo Institute of Technology)
[B-2-4]Optical and Electrical Properties of Nitrogen Doped a-Si:H Films for Solid State Image Pickup Devices
Y. Shimomoto、Y. Tanaka、H. Yamamoto、S. Takasaki、T. Baji、A. Sasano、T. Tsukada(1.Central Research Laboratory, Hitachi, Ltd.)
[B-2-5]Solid-State Color Image Sensor using Hydrogenated Amorphous Silicon
T. Baji、Y. Shimomoto、H. Matsumaru、N. Koike、T. Akiyama、A. Sasano、T. Tsukada(1.Central Research Laboratory, Hitachi Ltd.)
[B-2-6]Growth and Characterization of Amorphous Hydrogenated Silicon
M. Hirose(1.Department of Electrical Engineering, Hiroshima University)
[B-2-7]Analysis of Conversion Efficiency of Large Area a-Si:H Solar Cells
H. Haruki、Y. Uchida、H. Sakai、M. Nishiura、M. Kamiyama(1.Fuji Electric Corporate Research and Development Ltd.)
[B-2-8]Optimization of GD a-Si:H Film Property for Photovoltaic Devices by Means of the Cross Field Plasma Deposition Technique
S. Hotta、N. Nishimoto、Y. Tawada、H. Okamoto、Y. Hamakawa(1.Faculty of Engineering Science, Osaka University)
[B-2-9]Window Effects of Amorphous Silicon Carbide on p-1-n a-S1 Solar Cell
Y. Tawada、M. Kondo、H. Okamoto、Y. Hamakawa(1.Faculty of Engineering Science, Osaka University)
[A-3-1]Microdefects in Czochralski-Grown Silicon Crystals and Their Application to Gettering Technique
Seigo Kishino(1.Musashi Works of Hitachi Ltd.)
[A-3-2]Recent Advances in Photoluminescence Analysis of Si:Application to Epitaxial Layer and Nitrogen in Si
Michio Tajima(1.Electrotechnical Laboratory)
[A-3-3]Deep Levels Induced in Annealed CZ Silicon
Kousuke IKEDA、Hidetoshi TAKAOKA(1.Musashino Electrical Communication Laboratory, NTT)
[A-3-4]A New Method of Characterizing the In-depth Profile of Thermally Induced Defects in CZ Si
Hiroshi NAKAYAMA、Johji KATSURA、Taneo NISHINO、Yoshihiro HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
[A-3-5]Dry Development of Resist Patterns in Submicron Lithography
M. Tsuda(1.Laboratory of Physical Chemistry, Pharmaceutical Sciences, Chiba University)
[A-3-6]Chemical and Physical Roles of Individual Reactive Ions in Si Dry Etching
S. Tachi、K. Miyake、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-7]A Novel Technology for Self-Aligned Contact Formation
M. Sakamoto、M. Saito、K. Hamano(1.Nippon Electric Co., Ltd.)
[A-3-8]Ammonia annealed SiO2 films for thin gate insulator
I. KATO、T. ITO、S. INOUE、T. NAKAMURA、H. ISHIKAWA(1.FUJITSU LABORATORIES LTD.)
[A-4-1]MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors
Satoshi Hiyamizu、Takashi Mimura(1.Fujitsu Laboratories Ltd.)
[A-4-2]Recrystallization of Silicon Film on Nitride/Oxide double Insulating Structure by CW Laser Irradiation
T. Nishimura、H. Sakurai、S. Nagao、T. Isu、Y. Akasaka、N. Tsubouchi(1.LSI Development Laboratory, Mitsubishi Electric Corporation、2.Central Research Laboratory, Mitsubishi Electric Corporation)
[A-4-3]IMPROVEMENT OF SOS DEVICE PERFORMANCE BY SOLID-PHASE EPITAXY
Toshio YOSHII、Shinji TAGUCHI、Tomoyasu INOUE、Hiroyuki TANGO(1.Toshiba R and D Center, Semiconductor Device Engineering Laboratory, TOSHIBA CORPORATION)
[A-4-4]Improvement of channel mobility in SOS/MOSFETs by laser annealing
Y. Kobayashi、T. Ikeda、M. Nakamura、T. Suzuki(1.Hitachi Research Laboratory., Hitachi Ltd.)
[A-4-5]Formation of an epitaxial Si/insulator/Si structure by vacuum deposition of CaF2 and Si
T. Asano、H. Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-4-6]Laser-Induced Lateral, Vertically-Seeded Epitaxial Regrowth of Deposited Si Films over Various SiO2 Patterns
M. Tamura、M. Ohkura、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-4-7]Process Characterization of MOS devices by Scanning Electron Microscopy with 0.5-1 KV electrons
N. Hashimoto、H. Todokoro、S. Fukuhara、K. Senoo(1.Central Research Laboratory, Hitachi Ltd.)
[A-4-8]Trapped Ar Induced Deformation of Magnetron Sputtered Al Film Overlaid with Plasma SiN Film
H. Harada、H. Yakushiji、T. Nishioka、H. Kotani、Y. Hirata(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation Computer Development Laboratories Limited)
[A-4-9]Novel Low Temperature (＜300℃) Annealing of Amorphous Si by Scanned High Energy (～2.5 MeV) Heavy Ion Beam
Jyoji Nakata、Kenji Kajiyama(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[B-3-1]Josephson Latch Decoder
I. Hanyu、H. Suzuki、S. Hasuo、T. Yamaoka(1.Fujitsu Ltd.)
[B-3-2]JOSEPHSON TECHNOLOGY -- A TECHNOLOGY FOR HIGH PERFORMANCE COMPUTING SYSTEMS
Juri Matisoo(1.IBM Thomas J. Watson Research Center)
[B-3-3]New Materials for Josephson Junction Devices
T. Inamura、T. Murakami、T. Inukai、Y. Enomoto、M. Suzuki(1.Ibaraki Electrical Communication Laboratory, N.T.T.)
[B-3-4]NbN,Nb Double-Layered Base-Electrode Josephson Junctions
Shin KOSAKA、Kazuyoshi KOJIMA、Fujitoshi SHINOKI、Akira SHOJI、Hisao HAYAKAWA(1.Electrotechnical Laboratory)
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