1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-4-5]Formation of an epitaxial Si/insulator/Si structure by vacuum deposition of CaF2 and Si

T. Asano、H. Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1981.A-4-5
PDFダウンロードPDFダウンロード
戻る