1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

1981年8月26日〜8月27日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-4-9]Novel Low Temperature (＜300℃) Annealing of Amorphous Si by Scanned High Energy (～2.5 MeV) Heavy Ion Beam

Jyoji Nakata、Kenji Kajiyama(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
https://doi.org/10.7567/SSDM.1981.A-4-9
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