1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-1-4]Fraction of Interstitialcy Mechanism in Impurity Diffusion in Silicon

Satoru Matsumoto、Yutaka Ishikawa、Tatsuya Niimi(1.Department of Electrical Engineering, Keio University、2.Department of Applied Physics, Tokai University)
https://doi.org/10.7567/SSDM.1983.A-1-4
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