International Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

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International Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

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検索結果(110)

[A-0-1]Circuit Simulation of Three-Dimensional Device in Beam-Recrystallized Polysilicon Films

James F. Gibbons、Martin D. Giles、James C. Sturm、James T. Walker(1.Stanford Electronics Laboratory, Stanford University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-0-2]Evolution of New Device Concepts in Quantum-Well and Superlattice Structures

Hiroyuki Sakaki(1.Institute of Industrial Science, University of Tokyo)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-1-1]Silicon Molecular Beam Epitaxy

Yasuhiro SHIRAKI(1.Central Research Laboratory, Hitachi, Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-1-2]Study on Formation of Solid-Phase-Epitaxial CoSi2, Films and Patterning Effects

Kouichirou Ishibashi、Hiroshi Ishiwara、Seijiro Furukawa(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-1-3]Ultra-Smooth Heteroepitaxial NiSi2, Films on Silicon Grown by Molecular Beam Epitaxy

A. Ishizaka、Y. Shiraki、K. Nakagawa、E. Maruyama(1.Central Research Laboratory, Hitachi, Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-1-4]Fraction of Interstitialcy Mechanism in Impurity Diffusion in Silicon

Satoru Matsumoto、Yutaka Ishikawa、Tatsuya Niimi(1.Department of Electrical Engineering, Keio University、2.Department of Applied Physics, Tokai University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-1]Laser Recrystallized SOI

M. Tamura、M. Ohkura、N. Natsuaki、M. Miyao、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-2]Crystallinity of Recrystallized Si on SiO2, by Zone Melting Method

Kohei Higuchi、Shuichi Saitoh、Hidekazu Okabayashi(1.Microelectronics Research Labs., NEC Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-3]Formation of Si Epi./MgO･Al2O3 Epi./SiO2/Si and Its Epitaxial Film Quality

Masao Mikami、Yasuaki Hokari、Koji Egami、Hideki Tsuya、Masaru Kanamori(1.Fundamental Research Laboratories and Microelectronics Laboratories, NEC Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-4]Recrystallization of Polycrystalline Silicon Islands on Fused Silica

Yutaka Kobayashi、Akira Fukami、Takaya Suzuki(1.Hitachi Research Laboratory, Hitachi, Limited)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-5]Characterization of Laser Recrystallized SOI

S. Nakashima(1.Department of Applied Physics, Osaka University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-6]Effects of Encapsulation Layers on Planarization of Laser Recrystallized SOI Layers

M. Ohkura、K. Kusukawa、I. Yoshida、M. Miyao、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-2-7]Rapid Annealing of a Polysilicon Stacked Emitter Structure

N. Natsuaki、M. Tamura、T. Miyazaki、Y. Yanagi(1.Central Research Laboratory, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-1-1]GaAs-AlGaAs Superlattice Grown by MBE

H. OKAMOTO、Y. HORIKOSHI、H. IWAMURA(1.Musashino Electrical Communication Laboratory, N.T.T.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-1-2]The Growth of an InGaAs-InP Superlattice by the Chloride VPE

J. Komeno、K. Kodama、M. Takikawa、M. Ozeki(1.Fujitsu Laboratories Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-1]GaAs Digital Integrated Circuits

Masamichi Ohmori(1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-2]A 4x4 Bit Parallel Multiplier with GaAs JFET DCFL

Y. Kato、J. Kasahara、M. Wada、K. Taira、M. Dohsen、M. Arai、K. Gonoi、M. Sato、T. Hashimoto、N. Watanabe(1.Sony Corporation Research Center、2.Sony Corporation Semiconductor Group)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-3]Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka、Masaoki Ishikawa、Fumiaki Katano、Shuji Asai、Takashi Furutsuka、Yoichiro Takayama(1.Microelectronics Research Laboratories, NEC Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-4]A New GaAs MESFET with a Selectively Recessed Gate Structure

Issey OHTA、Tatsuo OTSUKI、Masaru KAZUMURA、Gota KANO(1.Semiconductor Laboratory, Matsushita Electronics Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-5]Device Model for Ion-Implanted GaAs MESFET Including Compensation Mechanism of SI Substrate

M. OGAWA、T. KAMIYA(1.Department of Electronic Engineering, University of Tokyo)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-6]Characterization of a New Gate Insulator BN on InP Grown by Low-Temperature CVD

Eiich Yamaguchi、Makoto Minakata(1.Musashino Electrical Comnunication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-2-7]Some Aspects of Research and Development in III-V Semiconductors in British Industry and Universities

P. N. Robson(1.Department of Electronic and Electrical Engineering, The University of Sheffield)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-1]Recent Progress in SOI Technology

Hon Wai Lam(1.Texas Instruments Incorporated)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-2]Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

Hiroshi Yamamoto、Hiroshi Ishiwara、Seijiro Furukawa、Masao Tamura、Takashi Tokuyama(1.Department of Applied Electronics, Tokyo Institute of Technology、2.Central Research Laboratroy, Hitachi Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-3]Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Tomoyasu Inoue、Kenji Shibata、Koichi Kato、Yuichi Mikata、Masahiro Kashiwagi(1.Toshiba Research and Development Center、2.Toshiba Semiconductor Device Engineering Laboratory、3.Toshiba Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-4]E-Beam Recrystallized SOI

Hiroshi Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-5]Silicon Film Recrystallization by Line Electron Beam

S. Saitoh、H. Okabayashi、K. Higuchi(1.Microelectronics Research Labs., NEC Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-3-6]Characterization of 0.1 μm Thick Isolated Silicon Layers on Porous Oxidized Silicon

Kazuo Imai、Hideyuki Unno(1.Atsugi Electrical Communication Laboratory, NTT)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-1]Microelectronic Thin Film Deposition by UV Laser Photolysis

P. K. Boyer、C. A. Moore、R. Solanki、W. K. Ritchie、G. J. Collins(1.Department of Electrical Engineering Colorado State University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-2]Photo-CVD Silicon Nitride and Silicon Oxide Films for VLSI Application

M. Hatanaka、H. Ito、H. Abe、H. Nakata(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-3]Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2

Y. Mishima、Y. Ashida、M. Hirose、Y. Osaka(1.Department of Electrical Engineering, Hiroshima University、2.Corporate Development Department, Mitsui Toatsu Chemicals, Inc.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-4]UV Resist-Stripping for High-Speed and Damage-Free Process

Kiyoshi Ozawa、Takashi Ito、Hajime Ishikawa(1.FUJITSU LABORATORIES LTD., ATSUGI)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-5]RCJI Decoder for Josephson Memory

Y. Wada、M. Hidaka、I. Ishida(1.Microelectronics Research Labs., NEC Corporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-6]A 35ps Ripple Carry Josephson Adder with Latch Using High Gain Direct Coupled Logic Gates

Masami Tokumitsu、Shuichi Fujita、Masaru Okada、Kohji Hohkawa、Akira Ishida(1.Atsugi Electrical Communication Laboratory, N.T.T.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-7]Josephson Cell Array Circuit Using Four Junction Logic (4 JL) Gates

Hiroshi NAKAGAWA、Hideo OHIGASHI、Itaru KUROSAWA、Eiichi SOGAWA、Susumu TAKADA、Hisao HAYAKAWA(1.Electrotechnicaｌ Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[A-4-8]Switching-Time Measurements on Josephson Variable Threshold Logic Gate

Norio Fujimaki、Shinya Hasuo、Toyoshi Yamaoka(1.Fujitsu Ltd.)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-1]Substrate Materials for GaAs Integrated Circuits

C. G. Kirkpatrick、R. T. Chen、D. E. Holmes、K. R. Elliott、P. M. Asbeck(1.Rockwell International Microelectronics Research and Development Center)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-2]Deep Level Characterization in LEC GaAs

T. Ikoma、M. Taniguchi、H. Noge(1.Institute of Industrial Science, University of Tokyo)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-3]Growth and Electrical Properties of Gallium Arsenide Single Crystal by Magnetic Field Applied LEC Technique

T. Fukuda、K. Terashima、T. Katsumata、F. Orito、T. Kikuta(1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-4]Influence of Growth Conditions and Alloy Composition on Deep Electron Traps of MBE Grown n-AlGaAs

K. Yamanaka、S. Naritsuka、M. Mannoh、K. Shinozaki、T. Yuasa、Y. Nomura、M. Mihara、M. Ishii(1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-5]Growth and Characterization of Low Dislocation Large GaP Single Crystals

M. Watanabe、T. Fujii、J. Ushizawa、S. Washizuka(1.Toshiba Research and Development Center)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-6]Formation and Thermal Stability of Au-GaAs(001) Interfaces Studied by Angle Resolved XPS and Rutherford Backscattering

K. L. I. Kobayashi、N. Watanabe、T. Narusawa、H. Nakashima(1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-7]LEC Growth of InAsxP1-x Bulk Crystals

Hisatsune Watanabe、Hisao Watanabe、Masaji Yoshida、Junji Matsui(1.Fundamental Research Laboratories, NEC Conporation)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-8]Raman Scattering Measurement of the Free-Carrier Concentration in AlxGa1-xAs

T. Yuasa、S. Naritsuka、M. Mannoh、K. Shinozaki、K. Yamanaka、Y. Nomura、M. Mihara、M. Ishii(1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-3-9]Local Modes from Si at Gallium and Arsenic Sites and Electrical Activation in Implanted GaAs

T. Nakamura、T. Katoda(1.Institute of Interdisciplinary Research Faculty of Engineering, The University of Tokyo)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-4-1]Organic Monomolecular Films and Their Applications

Michio Sugi(1.Electrotechnical Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-4-2]Electrical Properties of n--p Amorphous-Crystalline Silicon Heterojunctions

Hideharu Matsuura、Tetsuhiro Okuno、Hideyo Okushi、Nobuhiro Hata、Satoshi Yamasaki、Hidetoshi Oheda、Akihisa Matsuda、Kazunobu Tanaka(1.Electrotechnical Laboratory)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-4-3]a-Si Solar Cells Having More Than 9％ Conversion Efficiency

Koji Okuda、Koha Fujimoto、Yoshio Kashima、Hiroaki Okamoto、Yoshihiro Hamakawa(1.Faculty of Engineering Science, Osaka University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-4-4]High-Rate Deposition of a-Si:H Using SiH4

T. Hamasaki、M. Ueda、M. Hirose、Y. Osaka(1.Department of Electrical Engineering, Hiroshima University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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[B-4-5]a-Si:H MIS Position Sensitive Detectors

Satoshi Arimoto、Hidekazu Yamamoto、Hideo Ohno、Hideki Hasegawa(1.Department of Electrical Engineering, Hokkaido University)

1983 Conference on Solid State Devices and Materials1983年9月18日(日)

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