1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-3]Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Tomoyasu Inoue、Kenji Shibata、Koichi Kato、Yuichi Mikata、Masahiro Kashiwagi(1.Toshiba Research and Development Center、2.Toshiba Semiconductor Device Engineering Laboratory、3.Toshiba Corporation)
https://doi.org/10.7567/SSDM.1983.A-3-3
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