1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-6]Characterization of 0.1 μm Thick Isolated Silicon Layers on Porous Oxidized Silicon

Kazuo Imai、Hideyuki Unno(1.Atsugi Electrical Communication Laboratory, NTT)
https://doi.org/10.7567/SSDM.1983.A-3-6
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