1983 Conference on Solid State Devices and Materials
1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1983 Conference on Solid State Devices and Materials
1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[A-4-3]Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2
Y. Mishima、Y. Ashida、M. Hirose、Y. Osaka(1.Department of Electrical Engineering, Hiroshima University、2.Corporate Development Department, Mitsui Toatsu Chemicals, Inc.)
