1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-3]Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka、Masaoki Ishikawa、Fumiaki Katano、Shuji Asai、Takashi Furutsuka、Yoichiro Takayama(1.Microelectronics Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1983.B-2-3
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