1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

1983年8月30日〜9月1日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-4]A New GaAs MESFET with a Selectively Recessed Gate Structure

Issey OHTA、Tatsuo OTSUKI、Masaru KAZUMURA、Gota KANO(1.Semiconductor Laboratory, Matsushita Electronics Corporation)
https://doi.org/10.7567/SSDM.1983.B-2-4
PDFダウンロードPDFダウンロード
戻る