1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-1-1]Room Temperature Resonant-Tunneling Hot Electron Transistors with dc and Microwave Gain

Alan SEABAUGH、Yung-Chung KAO、John RANDALL、William FRENSLEY、Ali KHATIBZADEH(1.Central Research Laboratories Texas Instruments Incorporated)
https://doi.org/10.7567/SSDM.1990.B-1-1