[A-1-1]Towards High Speed Optoelectronics
Yasuharu SUEMATSU(1.Tokyo Institute of Technology)
1990 International Conference on Solid State Devices and Materials
1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
当該イベント内で検索します。
検索する
1990 International Conference on Solid State Devices and Materials
1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
当該イベント内で検索します。
検索する検索結果(310)
[A-1-2]Impact of VLSI Technology on Power Devices
Professor B. Jayant Baliga(1.Electrical and Computer Engineering Department)
[A-1-3]Optical and Electronic Sampling Techniques for High-Speed Devices
D. M. Bloom(1.Stanford Univ.)
[B-1-1]Room Temperature Resonant-Tunneling Hot Electron Transistors with dc and Microwave Gain
Aｌan SEABAUGH、Yung-Chung KAO、John RANDALL、William FRENSLEY、Ali KHATIBZADEH(1.Central Research Laboratories Texas Instruments Incorporated)
[B-1-2]InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
K. Taira、F. Nakamura、I. Hase、H. Kawai、Y. Mori(1.Sony Corporation Research Center)
[B-1-3]High Current Gain GaInAs /lnP Hot Electron Transistor
Shinji YAMAURA、Yasuyuki MIYAMOTO、Kazuhito FURUYA(1.Department of Electric and Electronics Engineering, Tokyo Institute of Technology)
[B-1-4]Negative Differential Resistance in a Novel GaAs Delta-Doping Tunneling Diode
Ruey Lue Wang、Yun Kuin Su、Yeong Her Wang(1.Department of Electrical Engineering, National Cheng Kung University)
[B-1-5]Effect of Reservoir in Electrodes on Double Barrier Resonant Tunneling
Akira Sugimura(1.NTT Basic Research Laboratories)
[B-1-6]A New HEMT Structure with a Quantum Well Formed by Inserting Monolayers in the Channel
Kohji MATSUMURA、Daijiro INOUE、Haruo NAKANO、Minoru SAWADA、Yasoo HARADA、Takashi NAKAKADO(1.Semiconductor Research Center, SANYO Electric Co., Ltd.)
[B-1-7]Signal and Noise Modeling for Striped Channel Field-Effect Transistors
Yuji Ando、Masaaki Kuzuhara、Kazuhiko Onda、Norihiko Samoto、Tomohiro Itoh(1.Microelectronics Research Laboratories, NEC Corporation)
[B-2-1]GaAs Heterojunction Bipolar Transistor (HBT) Device and IC Technology for High-Performance Analog/Microwave, Digital, and A/D Conversion Applications
Michael E. KIM、A. K. OKI、D. K. UMEMOTO、L. T. TRAN、L. M. PAWLOWICZ、K. W. KOBAYASHI、P. C. GROSSMAN、D. C. STREIT、K. S. STOLT、M. E. HAFIZI、J. B. CAMOU、R. ESFANDIARI、B. L. NELSON、B. K. OYAMA、B. R. ALLEN(1.TRW Inc., Electronics and Technology Division)
[B-2-2]Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Amplification
Mau-Chung F. CHANG、Nan-Lei WANG、Peter M. ASBECK、Wu-Jing HO、Neng-Haung SHENG、J. Aiden HIGGINS、Gerald J. SULLIVAN(1.Rockwell International Science Center)
[B-2-3]Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy
T. Y. Kuo、K. W. Goossen、J. E. Cunningham、C. G. Fonstad、F. Ren、W. Jan(1.AT&T Bell Laboratories、2.Massachusetts Institute of Technology)
[B-2-4]MBE-Grown GaAs Voltage-Controlled Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
K. F. YARN、C. Y. CHANG、Y. H. WANG、R. L. WANG(1.Department of Electrical Engineering, National Cheng Kung University、2.Institute of Electronics, National Chiao Tung University)
[B-2-5]Comprehensive Analysis of Bifunctional 2DEG-HBTs
T. USAGAWA、P. D. RABINZOHN、H. MIZUTA、K. HIRUMA、M. KAWATA、K. YAMAGUCHI(1.Central Research Laboratory, Hitachi Ltd.、2.Philips Research Organization)
[B-2-6]A Monte Carlo Analysis of AlGaAs/GaAs Ballistic Collection Transistors (BCT's) under High Current Injection
Hiroki NAKAJIMA、Tadao ISHIBASHI、Masaaki TOMIZAWA(1.NTT LSI Laboratories)
[B-2-7]Fabrication and Characterization of InAs Channel Heterojunction Field-Effect Transistors
Kanji Yoh、Toshiaki Moriuchi、Masataka Inoue(1.Department of Electrical Engineering, Osaka Institute of Technology)
[B-3-1]A Triple-Level Interconnection Technology for High Speed 16 Kb GaAs SRAM
M. Noda、S. Matsue、M. Sakai、K. Sumitani、H. Nakano、T. Oku、H. Makino、K. Nishitani、M. Otsubo(1.Optoelectronic and Microwave Devices R & D Lab.、2.LSI R & D Lab. Mitsubishi Electric Corporation)
[B-3-2]Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors
M. Berroth、U. Nowotny、V. Hurm、M. Lang、K. Kohler、U. Kaufel、A. Hulsmann、J. Schneider、T. Jakobus、Ch. Hoffmann、K. Bachem(1.Fraunhofer Institut fur Angewandte Festkorperphysik)
[B-3-3]Application of Hydrogenation to Improve GaAs/Si MESFETs and IC Performance by PECVD SiN
Mingxiang Li、Qingyi Tong、Gang Zou、J. Deboeck、M. Von Rossum、G.J. Declerck(1.Microelectronics Center, Southeast University、2.IMEC)
[B-3-4]A Sub-10 ps/Gate DCFL Circuit with 0.2 μm-Gate GaAs MESFET
Hiromi TSUJI、Hiroki I. FUJISHIRO、Hiroshi NAKAMURA、Seiji NISHI(1.Research and Development Group, Oki Electric Industry Co., Ltd.)
[B-3-5]Delay Times of 1/4-μm-Gate InAlAs-InGaAs HEMT's
Takatomo ENOKI、Kunihiro ARAI、Yasunobu ISHII、Toshiaki TAMAMURA(1.NTT LSI Laboratories、2.Opto-electronics Laboratories)
[B-3-6]Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD
Takashi Egawa、Shinji Nozaki、Tetsuo Soga、Takashi Jimbo、Masayoshi Umeno(1.Department of Electrical and Computer Engineering、2.Nagoya Institute of Technology)
[B-3-7]A New Interpretation of the Orientation Effect in GaAs MESFET's
Qing-An Huang、Shi-Ji Lu、AND Qin-Yi Tong(1.Microelectronics Center, Southeast University)
[B-4-1]GaAs Tetrahedral Quantum Dots: Towards a Zero-Dimensional Electron-Hole System
T. Fukui、S. Ando、Y. Tokura、T. Toriyama(1.NTT Basic Research Laboratories、2.NTT Applied Electronic Laboratories)
[B-4-2]AlAs/GaAs Disordered Superlattices
Akio SASAKI、Makoto KASU、Susumu NODA(1.Department of Electrical Engineering, Kyoto University)
[B-4-3]Fabrication and Optical Characterization of InGaAs/InP Quantum Wires and Dots
J. N. Patillon、C. Delalande、C. Jay、J. P. Andre、R. Gamonal、M. Iost、B. Soucail、M. Voos、G. M. Martin(1.Laboratoires d'Electronique Philips、2.Laboratoire de Physique de la Matiere Condensee de l'Ecole Normale Superieure)
[B-4-4]Selective Growth by Electron Beam Induced MOCVD for Quantum Microstructures
T. Takahashi、Y. Arakawa、M. Nishioka、T. Ikoma(1.Research Center for Aduanced Science and Technology, University of Tokyo、2.Institute of Industrial Science, University of Tokyo)
[B-4-5]GaInAs/InP Multi-Quantum Wells and Strained Super-Lattices Grown by Chemical Beam Epitaxy
Toshi K. Uchida、Takashi Uchida、Noriyuki Yokouchi、Kazuaki Mise、Fumio Koyama、Kenichi Iga(1.Tokyo Institute of Technology)
[B-4-6]Replacement of Surface In Atoms by Ga during Migration-Enhanced Epitaxy
Hiroshi YAMAGUCHI、Yoshiji HORIKOSHI(1.NTT Basic Research Laboratories)
[B-4-7]Polarization-Dependent Optical Absorption in (AlAs)1/2(GaAs)1/2 Fractional-Layer Superlattice Grown by MOCVD
Hiroaki Ando、Takashi Fukui、Hisao Saito(1.NTT Basic Research Laboratories)
[B-4-8]Ar Ion Laser-Assisted MOMBE and Selective Growth of InGaAs
Ryuzo Iga、Hideo Sugiura、Takeshi Yamada(1.NTT Opto-electronics Laboratories)
[C-1-1]Three-Dimensional Numerical Modeling of the Indirect Band-to-Band Tunneling in MOSFET's
Y. Odake、K. Kurimoto、S. Odanaka(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[C-1-2]Modeling of Band-to-Band Tunneling Mechanisms
W. Bergner、R. Kircher(1.Siemens AG, Corporate Research and Development Silicon Process Technology (SPT 33))
[C-1-3]Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs
Hans KOSINA、Siegfried SELBERHERR(1.Institute for Microelectronics Technical University of Vienna)
[C-1-4]Three Dimensional Transient Simulation of Complex Silicon Devices
Paolo Conti、Gernot Heiser、Wolfgang Fichtner(1.Integrated Systems Laboratory)
[C-1-5]A Scattering Matrix Approach to Advanced Bipolar Device Simulation
A. Das、M. S. Lundstrom(1.School of Electrical Engineering Purdue University)
[C-1-6]Quantum Transport Simulation Based on Wigner Formula
Shirun Ho、Ken Yamaguchi(1.Central Research Laboratory, Hitachi Ltd.)
[C-1-7]A Computer Simulation of the Recombination Process at Semiconductor Surfaces
Toshiya Saitoh、Hideki Hasegawa(1.Department of Electrical Engineering, Faculty of Engineering, Hokkaido University)
[C-2-1]Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient
Hisashi FUKUDA、Tomiyuki ARAKAWA、Seigo OHNO(1.Semiconductor Tech. Lab.、2.Oki Electric Industry Co., Ltd)
[C-2-2]Modification of the SiO2-Si System by Treatment in Atomic Hydrogen and Very Light Nitridation
I. A. Aizenberg(1.Academy of Sciences, U.S.S.R.)
[C-2-3]MOS Characteristics and Reliability of Thin Gate Dielectrics Grown by Rapid Thermal Processing in O2 Diluted with NF3
G. Q. Lo、W. Ting、D. L. Kwong、J. Kuehne、C. W. Magee(1.Microelectronics Research Center, The University of Texas at Austin、2.Texas Instrument Inc.、3.Evans East Inc.)
[C-2-4]Optimization of Nitridation and Re-oxidation Conditions for an EEPROM Tunneling Dielectric
N. Ajika、M. Ohi、O. Sakamoto、H. Arima、T. Matsukawa、N. Tsubouchi(1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)
[C-2-5]Thin Nitrided SiO2 Films for EEPROMs
M. DUTOIT、E. GOIN、N. NOVKOVSKI、I. AIZENBERG、J. MANTHEY、J. SOLO DE ZALDIVAR(1.Swiss Federal Institute of Technology、2.Faselec)
[C-2-6]A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation
Hirotaka MUTO、Haruhisa FUJII、Koichiro NAKANISHI、Shingo IKEDA(1.Manufacturing Development Lab.、2.Mitsubishi Electric Corp.)
[C-2-7]Low Temperature Deposition of High Quality Silicon Oxide Films
Hideo IZAWA、Yutaka NISHI、Masaya OKAMOTO、Hiroshi MORIMOTO、Mitsuo ISHII(1.Giant Electronics Technology Co.、2.Liquid Crystal Laboratories and Liquid Crystal Display Group, Sharp Co.)
[C-2-8]A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases
Akihiko Ishitani、Shiro Koseki(1.VLSI Development Division, NEC Corporation、2.NEC Scientific Information System Development, Ltd.)
[C-2-9]High Reliability Poly-Oxide Grown on in-situ Phosphorus Doped Amorphous Si
Takashi KOBAYASHI、Shinpei IIJIMA、Atsushi HIRAIWA(1.Central Research Laboratory, Hitachi Ltd.)
[C-2-10]Tantalum Oxide Films Formed by UV Photo-CVD Using Oxygen and Ozone and Its Photo-Chemical Leakage Current Reduction Mechanism
Satoshi TANIMOTO、Masahiro MATSUI、Minoru AOYAGI、Koichi KAMISAKO、Koichi KUROIWA、Yasuo TARUI(1.Department of Electronic Engineering, Tokyo University of Agriculture and Technology)
[C-3-1]n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma
Takashi MATSUURA、Hiroaki UETAKE、Junichi MUROTA、Koichi FUKUDA、Tadahiro OHMI、Nobuo MIKOSHIBA(1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University)
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