1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-1-2]InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

K. Taira、F. Nakamura、I. Hase、H. Kawai、Y. Mori(1.Sony Corporation Research Center)
https://doi.org/10.7567/SSDM.1990.B-1-2
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