1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-1-3]High Current Gain GaInAs /lnP Hot Electron Transistor

Shinji YAMAURA、Yasuyuki MIYAMOTO、Kazuhito FURUYA(1.Department of Electric and Electronics Engineering, Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1990.B-1-3
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