1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-1-6]A New HEMT Structure with a Quantum Well Formed by Inserting Monolayers in the Channel

Kohji MATSUMURA、Daijiro INOUE、Haruo NAKANO、Minoru SAWADA、Yasoo HARADA、Takashi NAKAKADO(1.Semiconductor Research Center, SANYO Electric Co., Ltd.)
https://doi.org/10.7567/SSDM.1990.B-1-6
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