1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-2-3]Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

T. Y. Kuo、K. W. Goossen、J. E. Cunningham、C. G. Fonstad、F. Ren、W. Jan(1.AT&T Bell Laboratories、2.Massachusetts Institute of Technology)
https://doi.org/10.7567/SSDM.1990.B-2-3
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