1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
戻る
International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-2-4]MBE-Grown GaAs Voltage-Controlled Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor

K. F. YARN、C. Y. CHANG、Y. H. WANG、R. L. WANG(1.Department of Electrical Engineering, National Cheng Kung University、2.Institute of Electronics, National Chiao Tung University)
https://doi.org/10.7567/SSDM.1990.B-2-4
PDFダウンロードPDFダウンロード
戻る