1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-2-7]Fabrication and Characterization of InAs Channel Heterojunction Field-Effect Transistors

Kanji Yoh、Toshiaki Moriuchi、Masataka Inoue(1.Department of Electrical Engineering, Osaka Institute of Technology)
https://doi.org/10.7567/SSDM.1990.B-2-7
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