1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-3-1]A Triple-Level Interconnection Technology for High Speed 16 Kb GaAs SRAM

M. Noda、S. Matsue、M. Sakai、K. Sumitani、H. Nakano、T. Oku、H. Makino、K. Nishitani、M. Otsubo(1.Optoelectronic and Microwave Devices R & D Lab.、2.LSI R & D Lab. Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1990.B-3-1
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