1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-3-6]Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD

Takashi Egawa、Shinji Nozaki、Tetsuo Soga、Takashi Jimbo、Masayoshi Umeno(1.Department of Electrical and Computer Engineering、2.Nagoya Institute of Technology)
https://doi.org/10.7567/SSDM.1990.B-3-6
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