1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[B-4-6]Replacement of Surface In Atoms by Ga during Migration-Enhanced Epitaxy

Hiroshi YAMAGUCHI、Yoshiji HORIKOSHI(1.NTT Basic Research Laboratories)
https://doi.org/10.7567/SSDM.1990.B-4-6
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