1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[C-2-1]Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient

Hisashi FUKUDA、Tomiyuki ARAKAWA、Seigo OHNO(1.Semiconductor Tech. Lab.、2.Oki Electric Industry Co., Ltd)
https://doi.org/10.7567/SSDM.1990.C-2-1
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