1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[C-2-10]Tantalum Oxide Films Formed by UV Photo-CVD Using Oxygen and Ozone and Its Photo-Chemical Leakage Current Reduction Mechanism

Satoshi TANIMOTO、Masahiro MATSUI、Minoru AOYAGI、Koichi KAMISAKO、Koichi KUROIWA、Yasuo TARUI(1.Department of Electronic Engineering, Tokyo University of Agriculture and Technology)
https://doi.org/10.7567/SSDM.1990.C-2-10
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