1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[C-2-3]MOS Characteristics and Reliability of Thin Gate Dielectrics Grown by Rapid Thermal Processing in O2 Diluted with NF3

G. Q. Lo、W. Ting、D. L. Kwong、J. Kuehne、C. W. Magee(1.Microelectronics Research Center, The University of Texas at Austin、2.Texas Instrument Inc.、3.Evans East Inc.)
https://doi.org/10.7567/SSDM.1990.C-2-3
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