1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[C-2-6]A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

Hirotaka MUTO、Haruhisa FUJII、Koichiro NAKANISHI、Shingo IKEDA(1.Manufacturing Development Lab.、2.Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1990.C-2-6
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