1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan

[C-2-8]A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases

Akihiko Ishitani、Shiro Koseki(1.VLSI Development Division, NEC Corporation、2.NEC Scientific Information System Development, Ltd.)
https://doi.org/10.7567/SSDM.1990.C-2-8
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