1990 International Conference on Solid State Devices and Materials
1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
1990 International Conference on Solid State Devices and Materials
1990年8月22日〜8月24日Hotel Sendai Plaza, Sendai, Japan
[C-3-1]n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma
Takashi MATSUURA、Hiroaki UETAKE、Junichi MUROTA、Koichi FUKUDA、Tadahiro OHMI、Nobuo MIKOSHIBA(1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University)
