1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
戻る
International Conference on Solid State Devices and Materials
1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan

[A-2-2]Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

Hiromasa Noda、Kaori Nakamura、Shin'ichiro Kimura(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1993.A-2-2
PDFダウンロードPDFダウンロード
戻る