[A-0-1]The Materials Challenge
Hans J. QUEISSER(1.Max-Planck-Institut fur Festkorperforschung and、2.SONY Research Center)
1993 International Conference on Solid State Devices and Materials
1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
当該イベント内で検索します。
検索する
1993 International Conference on Solid State Devices and Materials
1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
当該イベント内で検索します。
検索する検索結果(365)
[A-0-2]Past, Present and Future of Si LSI - Reminiscences about a Single MOSFET and Prospects for Multifunctional Si-Subsystems in the 21st Century
Minoru NAGATA(1.Corporate Technology Central Research Laboratory, Hitachi Ltd.)
[A-0-3]Recent Progress in Quantized Electronic Structures
James L. MERZ(1.Center for Quantized Electronic Structures QUEST University of California)
[A-1-1]Proposal of Adaptive-Learning Neuron Circuits with High Density Synapse Array of Ferroelectric Thin Films
Hiroshi Ishiwara(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)
[A-1-2]Electronic Chaos in Silicon Thyristor
Yoh YASUDA、Koichiro HOH(1.Faculty of Engineering, Yokohama National University、2.Faculty of Engineering, the University of Tokyo)
[A-1-3]High-Performance Buried-Gate MOSFETs with RTO-Grown Ultrathin Gate Oxide Films
Hisashi FUKUDA、Tomiyuki ARAKAWA、Toshiyuki OCHIAI Takahisa HAYASHI、Toshiyuki IWABUCHI(1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)
[A-2-1]Structure and Characteristics of 0.1μm to sub-0.1μm Devices
Mitsumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University)
[A-2-2]Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)
Hiromasa Noda、Kaori Nakamura、Shin'ichiro Kimura(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-3]Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)
Hironori Tsukamoto、Hiroshi Yamamoto、Michitaka Kubota、Thomas Boehm、Takashi Noguchi、Machio Yamagishi(1.Advanced Device Division, ULSI Research and Development Laboratories, Sony Corporation、2.Semiconductors Department, Research Center, Sony Corporation)
[A-2-4]Superior Performance of ALD(Atomic Layer Doped) MOSFETs in 0.1-μm Regime
Kaori Nakamura、Hiromasa Noda、Shin'ichiro Kimura(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-5]Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices
Satoshi Inaba、Tomohisa Mizuno、Masao Iwase、Hiromi Niiyama、Makoto Yoshimi、Akira Toriumi(1.ULSI Research Laboratories, R&D Center, Toshiba Corporation)
[A-2-6]Universal Behavior of Hot-Carrier Degradation in LDD NMOSFET's
J. S. Goo、H. Shin、H. Hwang、D. G. Kang、D. H. Ju(1.Research and Development Laboratory, GoldStar Electron Company, Ltd.)
[S-VI-1]600nm Range GaInP/AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates
Katsumi KISHINO、Ichirou NOMURA、Akihiko KIKUCHI、Yawara KANEKO(1.Dept. of Electrical & Electronics Engineering, Sophia University)
[S-VI-2]Long-wavelength Strained MQW Lasers
T. Kamijoh、H. Horikawa、Y. K. Sin、Y. Matsui、T. Nakajima、Y. Ogawa(1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
[S-VI-3]A Corrugation-Pitch-Modulated Strained Multiple-Quantum-Well Distributed Feedback Laser with an Ultranarrow (3.6kHz) Spectral Linewidth
M. Okai、M. Suzuki、T. Taniwatari(1.Central Research Laboratory, Hitachi, Ltd.)
[S-VI-4]Optical Gain and Intervalence Band Absorption in Long-Wavelength Strained Quantum Well Lasers
Atsuko Niwa、Tsukuru Ohtoshi、Takao Kuroda(1.Central Research Laboratory, Hitachi, Ltd.)
[S-VI-5]Blue Lasers and the Quantum Confined Stark Effect in II-VI Strained Quantum Wells
B. C. Cavenett、K. A. Prior(1.Heriot-Watt University Dept of Physics)
[S-VI-6]Room Temperature Pulsed Operation of 498-nm Lasers
S. Itoh、N. Nakayama、H. Okuyama、T. Ohata、M. Ozawa、K. Nakano A. Ishibashi、M. Ikeda、K. Akimoto、Y. Mori(1.Sony Corporation Research Center、2.Tsukuba University)
[S-VI-7]Blue-Green Injection Lasers Operating at Temperatures up to 394K
Martin F. H. Schuurmans、James M. Gaines、Ronald R. Drenten(1.Philips Laboratories, Philips Electronics North America Corp.)
[S-VI-8]ZnSe-Based Laser Diodes on p-GaAs with Current Confinement by Nitrogen Ion Bombardment
Shigeo HAYASHI、Kazuhiro OHKAWA、Ayumu TSUJIMURA、Shigeo YOSHII、Hidemi TAKEISHI、Tsuneo MITSUYU、Yasuhito TAKAHASHI、Tadashi NARUSAWA(1.Central Research Laboratories, Matsushita Electric Ind. Co., Ltd.、2.Semiconductor Research Laboratories, Matsushita Electric Ind. Co., Ltd.)
[S-VI-9]Blue/Blue-Green Electroluminescence from ZnSe-Based Wide-Gap II-VI Semiconductor Homo- and Double Hetero-Junction Diodes Grown by Photo-Assisted Metalorganic Vapor-Phase Epitaxy
Shizuo FUJITA、Takeharu ASANO、Kensaku MAEHARA、Shigeo FUJITA(1.Department of Electrical Engineering, Kyoto University)
[S-VI-10]Comparison of Electrical and Optical Properties of n-i-i and p-n ZnSSe Heterostructure Diodes
Yoshihisa FUJII、Ikuo SUEMUNE、Ken-ichi OKAMOTO、Masahiro FUJIMOTO、Kazuhiro OKAMURA(1.Faculty of Engineering, Hiroshima University、2.Research Institute for Electronic Science, Hokkaido University)
[S-VI-11]Strain-Induced Electronic States of a CdZnS/ZnS Quantum Well and Its Application to UV Laser Diode
Tsunemasa Taguchi、Chikara Onodera(1.Department of Electrical Engineering, Faculty of Engineering, Osaka University)
[S-VI-12]Nitrogen-Doped ZnSe Grown on Vicinal (100)-Oriented and (211)-Oriented GaAs Substrates by Molecular Beam Epitaxy
Z. Zhu、T. Ebisutani、K. Takebayashi、K. Tanaka、T. Yao(1.Department of Electrical Engineering, Hiroshima University)
[S-VI-13]Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe
Masakatsu Suzuki、Takeshi Uenoyama、Akira Yanase(1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.、2.College of Integrated Arts and Science, University of Osaka Prefecture)
[S-III-1]In-Situ Transmission Electron Microscopy Study of Roughness during Silicon Oxidation and Silicidation
J. M. GIBSON、X. TONG、R. D. TWESTEN、F. M. ROSS(1.University of Illinois, Department of Physics、2.Lawrence Berkeley Laboratories)
[S-III-2]Second-Harmonic Generation: A New Technique for Probing Chemical Bonding on Vicinal Si(III) Surfaces
C. H. Bjorkman、T. Yasuda、G. Lucovsky、U. Emmerichs、C. Meyer、K. Leo、H. Kurz(1.Departments of Physics, Materials Science & Engineering, and Electrical & Computer Engineering, North Carolina State University、2.Institute of Semiconductor Electronics II, Rheinisch-Westfalische Technische Hochschule)
[S-III-3]Layer-by-Layer Etching of Si by Self-Limited Adsorption of Chlorine with Alternated Irradiation of Low Energy Ar+ Ions
Takashi MATSUURA、Junichi MUROTA、Yasuji SAWADA、Tadahiro OHMI(1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Department of Electronic Engineering, Faculty of Engineering, Tohoku University)
[S-III-4]Influence of the Structural Transition Layer on the Reliability of Thin Gate Oxides
Eiji HASEGAWA、Koichi AKIMOTO、Masaru TSUKIJI Taishi KUBOTA、Akihiko ISHITANI(1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Research Laboratories, NEC Corporation)
[S-III-5]Local Ordering and Layer by Layer Growth of the Initial Thermal Oxide of Si(001)
Masaharu UDAGAWA、Masaaki NIWA、Isao SUMITA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Matsushita Research Institute Tokyo, Inc.)
[S-III-6]Spatially Resolved Characterization of the Si/SiO2 System Using Conducting Atomic Force Microscopy
Murrell M. P.、Welland M. E.、Wong T. M. H.(1.University of Cambridge Department of Engineering)
[S-III-7]Characterization and Control of Native Oxide on Silicon
Mizuho MORITA、Tadahiro OHMI(1.Department of Information Science, Graduate School of Information Sciences, Tohoku University、2.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、3.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)
[S-III-8]The Initial Stage of Epitaxial Growth of Al on the Si(111) Surface Observed by Scanning Tunneling Microscopy
Masamichi YOSHIMURA、Katsuya TAKAOKA、Takafumi YAO(1.Department of Electrical Engineering, Hiroshima University)
[S-III-9]Native Oxides on Si-Surfaces of Deep-Submicron Contact-Hole-Bottoms
N. Aoto、M. Nakamori、H. Hada、T. Kunio、E. Ikawa(1.ULSI Device Development Laboratories, Microelectronics Research Laboratories NEC Corporation)
[D-1-1]The New Round World of Carbon Chemistry and Materials Science
H W Kroto、K Prassides、R Taylor、D R M Walton、M Endo(1.University of Sussex、2.Shinshu University)
[D-1-2]Si Grain-Free Highly Conductive Microcrystalline SiC Films Prepared by Using Organic Silane Gas
K. Sasaki、T. Miyajima、H. Hosoya、S. Furukawa(1.Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology)
[D-1-3]Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
Akihiko KIKUCHI、Hiroyuki HOSHI、Katsumi KISHINO(1.Dept. of Electrical & Electronics Engineering, Sophia University)
[D-1-4]MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
Masaki NAGAHARA、Seiro MIYOSHI、Hiroyuki YAGUCHI、Kentaro ONABE、Yasuhiro SHIRAKI、Ryoichi ITO(1.Department of Applied Physics, The University of Tokyo、2.Research Center for Advanced Science and Technology, The University of Tokyo)
[D-1-5]Selective, Maskless Growth of InSb on a Selenium-Treated GaAs by Molecular Beam Epitaxy
Yoshio Watanabe、Tom Scimeca、Fumihiko Maeda、Masaharu Oshima(1.NTT Interdisciplinary Research Laboratories)
[D-2-1]Growth of GaAs on Si(100) with (GaAs)1-x(Si2)x/GaAs Strained-Layer Superlattice by Migration-Enhanced Epitaxy
Kazuhiko Nozawa、Tatavarti Sudersena Rao、Yoshiji Horikoshi(1.NTT Basic Research Laboratories、2.Institute of Microstructural Sciences, National Research Council of Canada)
[D-2-2]Formation of Strain-Free GaAs-On-Si Structures by Annealing under Ultrahigh Pressure
Hiroshi Ishiwara、Tomohisa Hoshino、Masakazu Usui、Hisashi Katahama(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)
[D-2-3]Threading Dislocations in GaAs on Pre-Patterned Si and in Post-Patterned GaAs on Si
M. Tamura、T. Saitoh、J. Palmer、T. Yodo、J. Kasai、A. Nishida(1.Optoelectronics Technology Research Laboratory、2.Central Research Laboratory, Hitachi, Ltd.)
[D-2-4]Realization of Tensile Strain on GaAs Substrates with Non-Pseudomorphic Grid Layer
Yuen-Chuen CHAN、Tetsurou MORIMOTO、Kunio TADA(1.Department of Electronic Engineering University of Tokyo)
[D-2-5]Optical Anisotropy of Pseudomorphic (In, Ga)As Multiple Quantum Wells Oriented in the [110] Crystallographic Direction
D. Sun、E. Towe(1.Department of Electrical Engineering University of Virginia)
[D-2-6]Efficient Er Luminescence Centers Formed in GaAs by MOCVD with Oxygen Codoping
Kenichiro Takahei、Akihito Taguchi(1.NTT Basic Research Laboratories)
[S-II-1]Silicon-on-Insulator for High Speed ULSI
Chenming HU(1.Department of Electrical Engineering and Computer Science University of California)
[S-II-2]Selective Etching of Native Oxide Using Vapor HF Processing
J. M. de Larios、J. O. Borland、S. Hatada、I. Tamatani(1.Genus, Inc., Thin Film Division、2.Sumitomo Metal Industries, Ltd., Semiconductor Equipment Div.)
[S-II-3]Hot-Carrier Related Phenomenon in MOSFETs with Furnace N2O-Nitrided Gate Oxides
G. W. Yoon、J. Ahn、G. Q. Lo、D. L. Kwong(1.Microelectronics Research Center The University of Texas at Austin)
[S-II-4]Correlation between Chemical Structure and Electrical Properties of NH3-Nitrided N2O Oxides
M. Bhat、G. W. Yoon、A. B. Joshi、J. Kim、J. Ahn、D. L. Kwong、M. Arendt、J. M. White(1.Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas、2.Department of Chemistry The University of Texas)
[S-II-5]Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET
K. Ohmi、K. Nakamura、T. Futatsuki、K. Makihara、T. Ohmi(1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)
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