1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan
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International Conference on Solid State Devices and Materials
1993 International Conference on Solid State Devices and Materials

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜9月1日Makuhari Messe, Chiba, Japan

[A-2-3]Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)

Hironori Tsukamoto、Hiroshi Yamamoto、Michitaka Kubota、Thomas Boehm、Takashi Noguchi、Machio Yamagishi(1.Advanced Device Division, ULSI Research and Development Laboratories, Sony Corporation、2.Semiconductors Department, Research Center, Sony Corporation)
https://doi.org/10.7567/SSDM.1993.A-2-3
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