[D-2-2]Formation of Strain-Free GaAs-On-Si Structures by Annealing under Ultrahigh Pressure
Hiroshi Ishiwara、Tomohisa Hoshino、Masakazu Usui、Hisashi Katahama(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)
